Applied Materials, Inc.

Usama Dadu

Wonseok Lee

Hamid Noorbakhsh

Jason C Della Rosa

Jisoo Kim

Vladimir Knyazik

Kenny Linh Doan

Kartik Ramaswamy

Valentin Nikolov Todorow

Yue Guo

Sergio Fukuda Shoji

Haitao Wang

Brad L Mays

Daisuke Shimizu

Michael G Chafin

Li Ling

Kevin Choi

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

Showerhead having a detachable high resistivity gas distribution plate

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.

A method, apparatus and system for dechucking a processing object from a surface of an electrostatic chuck (ESC) in a processing chamber can include applying to the ESC for a first time interval, a first dechuck voltage having a substantially equal magnitude and opposite polarity of a chuck voltage chucking the processing object to the surface of the ESC, selecting a second dechuck voltage having an opposite polarity as the first dechuck voltage, linearly sweeping the ESC voltage from the first dechuck voltage to the second dechuck voltage over a second time interval, monitoring the ESC current during the second time interval until a current spike in the ESC current above a threshold is detected, communicating a command to move support pins up to remove the processing object from the ESC surface, and maintaining the second dechuck voltage until the processing object is separated from the surface of the ESC.

Method, apparatus and system for wafer dechucking using dynamic voltage sweeping

Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Using bias RF pulsing to effectively clean electrostatic chuck (ESC)

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Hollister, CA, United States of America

Usama Dadu