Infineon Technologies Ag

Ursula Hedenig

Thomas Grille

Peter Irsigler

Bernhard Jakoby

Ulrich Schmid

Daniel Maurer

Tobias Frischmuth

Ventsislav M Lavchiev

Thomas Krotscheck Ostermann

Markus Kahn

Michael Schneider

Jonathan Silvano De Sousa

Thomas Christian Neidhart

Martin Zgaga

Guenter Denifl

Michael Roesner

Gudrun Stranzl

Vijaye Rajaraman

Thomas Popp

Stefan Clara

Alfons Dehe

Carsten Von Koblinski

Andre Brockmeier

Markus Ottowitz

Sokratis Sgouridis

Soenke Pirk

Joern Plagmann

Helmut Schoenherr

Manuel Dorfmeister

Günter Denifl

Manfred Kaltenbacher

Ventsislav Lachiev

Ralph Muth

Sylvicley Figueira Da Silva

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Micromechanical structure and method for manufacturing the same

Aspects of a microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device, are discussed herein. The microelectromechanical device may include: a substrate; a diaphragm mechanically coupled to the substrate, the diaphragm comprising a stressed region to buckle the diaphragm into one of two geometrically stable positions; an actuator mechanically coupled to the diaphragm, the actuator comprising a piezoelectric layer over the diaphragm; a controller configured to provide an electrical control signal in response to a digital sound input; wherein the actuator is configured to receive the electrical control signal to exert a mechanical piezoelectric force on the diaphragm via the piezoelectric layer to move the diaphragm to create a sound wave.

Microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8&#xd7;10quantum structures per cm. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 &#x3bc;m and 10 &#x3bc;m or to absorb light with a light absorption maximum at a wavelength of between 2 &#x3bc;m and 10 &#x3bc;m.

Semiconductor devices, a fluid sensor and a method for forming a semiconductor device

A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.

Sensing systems and methods using a coupling structure

A sensor and methods of making a sensor are disclosed. The sensor may include a substrate including an opening, an optical source disposed in the substrate and configured to generate an optical source signal, an optical detector disposed in the substrate so that the opening is disposed between the optical source and the optical detector, a plurality of optical cavity structures disposed in the opening wherein each of the plurality of optical cavity structures contains an enclosed cavity so that the respective enclosed cavities are not in gas communication with each other, wherein the plurality of optical cavity structures are arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to process an optical signal received by the optical detector.

Photonic crystal sensor structure and a method for manufacturing the same

In various aspects of the disclosure, a semiconductor device including at least one semiconductor die; a dielectric layer adjoining the semiconductor die; geometric structures formed in the dielectric layer; and a conductive layer deposited over the dielectric layer, wherein the conductive layer is at least partially located over the geometric structures.

Production of adhesion structures in dielectric layers using photoprocess technology and devices incorporating adhesion structures

A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

Micromechanical structure comprising carbon material and method for fabricating the same

A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.

Micromechanical structure and method for fabricating the same

A hole plate and a MEMS microphone arrangement are disclosed. In an embodiment a hole plate includes a substrate with a first main surface, a second main surface, and a lateral surface and a perforation structure formed within the substrate, the perforation structure having a plurality of through-holes through the substrate, wherein the through-holes and the lateral surface are a result of a simultaneous dry etching step.

Method for simultaneous structuring and chip singulation

Various embodiments disclosed herein include a capacitive thermometer including a deflectable membrane and a sense electrode. The deflectable membrane is configured to adjust a capacitive value based on a temperature of the deflectable membrane.

System and method for a capacitive thermometer

A sensor and methods of making a sensor are disclosed. The sensor may include a substrate, an optical source, an optical detector, a plurality of optical cavities in the substrate or in a layer structure over the substrate, where the plurality of optical cavities may be arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to receive a signal representing an optical signal received by the optical detector.

A method for use in manufacturing semiconductor devices includes providing a wafer on a support, covering a central wafer portion of the wafer, and cutting a marginal wafer portion of the wafer from the wafer. According to an embodiment of an apparatus, the apparatus includes a support configured to support a wafer, a masking device configured to cover a central wafer portion of the wafer, and a cutting device configured to cut a marginal wafer portion of the wafer from the wafer.

Method of manufacturing semiconductor devices

A sensor system having a multi-pass interaction region is disclosed. The system includes an input region, a multi-pass region, and an output region. The input region is configured to receive emitted light. The multi-pass region is coupled to the input region and is configured to absorb portions of the emitted light according to a specimen proximate the multi-pass region. The output region is coupled to the multi-pass region and is configured to provide interacted light from the multi-pass region.

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Villach, Austria

Ursula Hedenig