Honeywell G.m.b.h.

Other

Uppili Sridhar

Mark Robert Plagens

James D Cook

Richard Alan Davis

Robert G Johnson

Carl Stewart

D Joseph Maurer

James O Holmen

Ronald B Foster

Albert W Drabowicz

A pressure sensor is provided in which the pressure sensing components are isolated from a portion of an attached buffer member which is connected to a fluid conduit. The offset characteristic of the pressure sensor isolates stress from being transmitted between an attached external fluid conduit and the sensitive components of the pressure sensor. One embodiment of the pressure sensor solders a fluid conduit structure to a buffer member that is attached to a pressure sensor die. An alternative embodiment of the present invention avoids the need for making solder connections between the sensor structure and external components by utilizing elastomeric conductors and pressure seals in association with the pressure sensor composite structure and first and second housing structures. These elastomeric conductors also provide improved stress isolation. The housing structures are used to compress to the seal and the elastomeric conductor against selected portions of the composite sensor.

Offset pressure sensor

A method is provided for assuring good electrical contact between a power supply and appropriate regions of silicon wafers to assure proper etching during the micromachining of the silicon die locations on the wafer. A plurality of conductors are disposed in the interstices between rows and columns of die locations and each die location that is to be etched is provided with a conductive extension connecting its relevant region with one of the interstice conductors. A preselected number of die locations are dedicated to the purpose of providing conductive pads against which contacts of a power supply can be disposed. The many interconnections between the row interstice conductors and the column interstice conductors assures good electrical distribution across the entire surface of a first side of the wafer.

Method for etching silicon

Disclosed is a Hall effect element formed in a single crystal semiconductor chip with the direction of bias current flow aligned parallel with the &lt;100&gt; cyrstallographic direction and also parallel with edges of the chip. The orientation described is selected to minimize piezoresistive effects produced by packaging-induced physical stress on the semiconductor chip.

Hall effect element aligned to reduce package-induced offsets

The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.

Adhesion layer for platinum based sensors

Growing community of inventors

Garland, TX, United States of America

Uppili Sridhar