Samsung Electronics Co., Ltd.

Unki Kim

Jinbum Kim

Seunghun Lee

Pankwi Park

Ilgyou Shin

Yihwan Kim

Sungkeun Lim

Yuyeong Jo

Jihye Yi

Dongchan Suh

A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.

Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same

A semiconductor device is described that includes a substrate, an active region protruding from the substrate and extending in a first direction, a plurality of channel layers disposed on the active region and spaced apart from each other in a direction perpendicular to an upper surface of the substrate, an isolation film disposed between a lowermost channel layer of the plurality of channel layers and the active region, a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction, and a source/drain region disposed on at least one side of the gate electrode and connected to each of the plurality of channel layers. The isolation film is disposed on a level higher than a bottom surface of the source/drain region.

Semiconductor device

Growing community of inventors

Suwon-si, South Korea

Unki Kim