Samsung Electronics Co., Ltd.

Ungcheon Kim

Yukyung Park

Seungkwan Ryu

Sungwoo Park

Wonil Lee

Yunseok Choi

Heonwoo Kim

An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

Interposer, method for fabricating the same, and semiconductor package having the same

An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

Interposer and semiconductor package including same

Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

Interposer, semiconductor package including the same, and method of fabricating the interposer

A semiconductor package includes a base substrate and an interposer substrate. The interposer substrate includes a semiconductor substrate, a first passivation layer, a wiring region, a through via penetrating through the semiconductor substrate and the first passivation layer, and a second passivation layer covering at least a portion of the first passivation layer and having an opening exposing a lower surface of the through via. The semiconductor package further includes a conductive pillar extending from the opening of the second passivation layer; and a conductive bump disposed between the conductive pillar and the base substrate. The opening of the second passivation layer has inclined side surfaces such that a width of the opening decreases towards the first passivation layer, and side surfaces of the conductive pillar are positioned to overlap the inclined side surfaces of the second passivation layer in a vertical direction.

Growing community of inventors

Cheonan-si, South Korea

Ungcheon Kim