Samsung Electronics Co., Ltd.

Ung-hwan Pl

Sun-ae Seo

Sung-chul Lee

Young-jin Cho

Ji-young Bae

Jai-kwang Shin

Seung-Jun Lee

Jin-seong Heo

Hyung-soon Shin

An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.

Magnetic storage device having a buffer track and storage tracks, and method of operating the same

A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.

Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices

Growing community of inventors

Seoul, South Korea

Ung-hwan Pl