Samsung Electronics Co., Ltd.

Sungkyunkwan University

Snur & Db Foundation

Unist-academy Industry Research Corporation

Un-jeong Kim

Eun-hong Lee

Young-geun Roh

Chang-won Lee

Yeon-sang Park

Young-Hee Lee

Sang-mo Cheon

Jae-soong Lee

Jin-eun Kim

Woo-jong Yu

Eun-ju Bae

Yo-seb Min

Jae-young Choi

Jong-min Kim

Jong-jin Park

Seung-nam Cha

Soo-Jin Park

Sang-jin Lee

Jun-hee Choi

Jae-hyun Hur

Sung Woo Myung

Hyung-Woo Lee

Hyung-bin Son

Seung-Hun Hong

Seung-min Yoo

Il-ha Lee

A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer on a substrate; patterning (or processing) the material layer; and forming a graphene layer before patterning the material layer, wherein the graphene layer is formed on a surface of the material layer or on a surface of the substrate under the material layer. The substrate may be an insulation substrate. In addition, the substrate may have a stacked structure including a plurality of layers.

Method of preventing charge accumulation in manufacture of semiconductor device

A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.

Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure

Provided are an optical device and a method of controlling propagation directions of light and a surface plasmon using the optical device. The optical device includes a light source, a substrate, and a metal layer that is disposed on the substrate, the metal layer includes at least two slots, and propagation directions of light and a surface plasmon may be controlled by using the light that is polarized in a direction parallel to a direction of a long length of any one of the at least two slots.

Optical device and method of controlling propagation directions of light and surface plasmon by using the optical device

An optical interconnection for a stacked integrated circuit, is provided. The optical interconnection includes: an optical transmission unit disposed in a first layer and an optical receiving unit disposed in a second layer, different from the first layer, and spaced apart from the optical transmission unit by a predetermined gap. The optical transmission unit includes a first optical antenna that outputs light; the optical receiving unit includes a second optical antenna which receives light transmitted from the optical transmission unit. At least one of the first and second optical antennas includes a plurality of nanostructures configured to transmit or receive an optical signal.

Optical interconnection for stacked integrated circuit

An optical modulator includes a dielectric layer and a metal layer arranged on the dielectric layer. In the optical modulator, a first light of a first frequency and a second light of a second frequency that are incident upon the metal layer exit from the metal layer at different refractive angles due to surface plasmon generation.

Optical modulator and method of manufacturing the optical modulator

A nanostructure, an optical device including the nanostructure, and methods of manufacturing the nanostructure and the optical device. A method of manufacturing a nanostructure may include forming a block copolymer template layer and a precursor pattern of metal coupled to the block copolymer template layer on a graphene layer, and forming a metal nanopattern on the graphene layer by removing the block copolymer template layer and reducing the precursor pattern.

Nanostructure, optical device including the same, and methods of manufacturing the nanostructure and the optical device

A surface plasmon laser includes a metal layer, a gain medium layer provided on the metal layer and having a circular structure portion in which a whispering gallery mode is generated in which surface plasmon light generated due to surface plasmon resonance on an interface with the metal layer rotates along a circle, and a deformed portion formed to output part of laser light generated in the circular structure portion of the gain medium layer.

Surface plasmon laser

A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.

Semiconductor device and method of manufacturing the same

A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.

Static random access memories having carbon nanotube thin films

Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.

Method of fabricating metal oxide film on carbon nanotube and method of fabricating carbon nanotube transistor using the same

Provided is a method of manufacturing carbon nanotube (CNT) device arrays. In the method of manufacturing CNT device arrays, catalyst patterns may be formed using a photolithography process, CNTs may be grown from the catalyst patterns, and electrodes may be formed on the grown CNTs.

Method of manufacturing carbon nanotube device array

An electroconductive fiber, a method of manufacturing an electroconductive fiber, and a fiber complex including an electroconductive fiber are provided, the electroconductive fiber includes an electroconductive polymer, an elastic polymer that forms a structure with the electroconductive polymer, and a carboneous material on at least one of the electroconductive polymer and the elastic polymer.

Electroconductive fiber, a fiber complex including an electroconductive fiber and methods of manufacturing the same

A convertible logic circuit includes a plurality of carbon nanotube transistors. Each carbon nanotube transistors are configurable as p-type or an n-type transistors according to a voltage of a power source voltage. Each carbon nanotube transistor includes a source electrode, a drain electrode, a channel formed of a carbon nanotube between the source electrode and the drain electrode, a gate insulating layer formed on the carbon nanotubes, and a gate electrode formed on the gate insulating layer.

Convertible logic circuits comprising carbon nanotube transistors having ambipolar charateristics

Provided is a method of transferring carbon nanotubes formed on a donor substrate to an acceptor substrate which may include vertically forming carbon nanotubes on a first substrate, providing a second substrate, aligning the first substrate with the second substrate so that the carbon nanotubes face the second substrate, and transferring the carbon nanotubes onto the second substrate by pressing the first substrate onto the second substrate.

Method of transferring carbon nanotubes

Provided are a method of doping a carbon nanotube (CNT) of a field effect transistor and a method of controlling the position of doping ions. The method may include providing a source, a drain, the CNT as a channel between the source and the drain, and a gate, applying a first voltage to the gate, and adsorbing ions on a surface of the CNT.

Growing community of inventors

Busan, South Korea

Un-jeong Kim