Samsung Electronics Co., Ltd.

Un Jeon

Woojin Jung

Joonsoo Park

Byeongsoo Kim

Cheolhong Kim

Taehong Min

Sang-Ho Yun

Provided are methods of generating and revising overlay correction data, a method of performing a photolithography process using the overlay correction data, and a method of performing a photolithography process while revising the overlay correction data. The method of revising the overlay correction data includes forming a plurality of overlay keys on a first set of wafers using first overlay correction data, measuring first overlay keys formed on first overlay coordinates in a first shot area of a first wafer among the first set of wafers, generating first overlay error data, and revising primarily the first overlay correction data using the first overlay error data, measuring second overlay keys formed on second overlay coordinates in a second shot area of a second wafer among the first set of wafers, generating second overlay error data, and revising secondarily the primarily revised first overlay correction data using the second overlay error data, and measuring third overlay keys formed on third overlay coordinates in a third shot area of a third wafer among the first set of wafers, generating third overlay error data, revising tertiarily the secondarily revised first overlay correction data, and generating second overlay correction data. The first overlay coordinates, the second overlay coordinates, and the third overlay coordinates are mutually exclusive.

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Seoul, South Korea

Un Jeon