International Business Machines Corporation

Umar M Ahmad

Krishna Gandhi Sachdev

Eugene R Atwood

John Ulrich Knickerbocker

Sampath Purushothaman

Sudipta Kumar Ray

Chon Cheong Lei

Joel R Whitaker

Govindarajan Natarajan

Raschid Jose Bezama

Kwong Hon Wong

Eric D Perfecto

Charles Hampton Perry

Hormazdyar M Dalal

James N Humenik

Chandrika Prasad

Harsaran S Bhatia

Lawrence D David

Donald Rene Wall

Rao Venkateswara Vallabhaneni

Daniel George Berger

Ananda H Kumar

Arthur Bross

George Czornyj

Keshav B Prasad

William H Price

Susan J LaMaire

Satya P Bhatia

Hsing Hsiung Chen

Ananda Kumar

Harry K Harrison

Richard R Jones

A plate for use in mixing and testing materials in the pharmaceutical industry is formed by a method in which apertures in a set of greensheets are formed by a material removal process, at least some of the apertures being filled with a fugitive material that escapes during sintering.

Method of forming a plate for dispensing chemicals

A method of removing cured silicone polymer deposits from electronic components. The components are immersed in a preheated solution of a quaternary ammonium fluoride in a hydrophobic non-hydroxylic aprotic solvent with agitation. The components are then immersed in a preheated solvent consisting essentially of a hydrophobic aprotic solvent with agitation. This is followed by a rinse and spray of the components with a hydrophilic, essentially water soluble solvent, with agitation. The components are then immersed in a water bath and then rinsed with a pressurized spray of water and then dried with a N blow dry.

Method of removing silicone polymer deposits from electronic components

This invention provides a method for treating waste water containing organic bases such as tetramethyl ammonium hydroxide and dissolved metals such as Mo, W, Cu and Ni which are generated from mask cleaning and Mo etching processes. The organic base along with Cu and Ni is first removed preferably by passing the effluent through a cation exchange resin followed by passing the cation exchanged effluent through an anion exchange resin to remove the Mo and W metals. The treated waste water meets federal guidelines for dissolved metal contaminant limits for water discharge to water ways. Alternatively, filtered effluent is directly passed through an anion exchange resin to remove Mo and W and the dissolved TMAH and copper and nickel are removed by cation exchange.

Removal of soluble metals in waste water from aqueous cleaning and etching processes

A method is provided for etching and removing extraneous molybdenum or debris on ceramic substrates such as semiconductor devices and also for molybdenum etching in the fabrication of molybdenum photomasks. The method employs a multi-step process using an acidic aqueous solution of a ferric salt to remove (etch) the molybdenum debris followed by contacting the treated substrate with an organic quaternary ammonium hydroxide to remove any molybdenum black oxides which may have formed on the exposed surface of treated molybdenum features in ceramic substrates. The method is environmentally safe and the waste solutions may be easily waste treated for example by precipitating the ferric salts as ferric hydroxide and removing anions such as sulfate by precipitation with lime. The method replaces the currently used method of employing ferricyanide salts which create serious hazardous waste disposal and environmental problems.

Method of etching molybdenum metal from substrates

A wafer test and burn-in fixture and methodology including a wafer probe having flexible tabs and a load board coupled to the wafer probe using the flexible tabs. The fixture also includes a bladder which biases the wafer probe to contact a wafer. A temperature control apparatus is provided to control the temperature of the wafer probe and the wafer. Tests are performed on the wafer using built-in self tests or wrap wiring tests.

Wafer test fixture using a biasing bladder and methodology

This invention relates to the use of non-halogenated and non-aromatic cleaning solvents as environmentally safe replacement of perchloroethylene and xylene to remove rosin flux residue formed on electronic circuit device materials during solder interconnection process for assembly of electronic components.

Process of removing flux residue from microelectronic components

A microelectronic module comprising at least two chips mounted to a chip receiving surface. Each chip having an edge including at least one chip input and one chip output. The chips are arranged such that the edge of one chip is opposite the edge of the other chip. The chips are spaced apart by a predetermined distance. Each chip includes at least one optical transmitter attached to the edge of the chip. The transmitter has an input coupled to the chip output and a transmission portion for generating optical signals at a predetermined angle and that are representative of signals inputted to the transmitter input. The microelectronic module further includes at least one optical receiver attached to the edge of the chip. The optical receiver has an output coupled to the chip input and a receiving portion for directly receiving optical signals generated by a corresponding optical transmitter of the other chip. The optical receiver and the corresponding optical transmitter form a transmitter/receiver pair. The predetermined distance and the predetermined angle prevent overlapping of the optical signals of the transmitter/receiver pairs.

Optoelectronic interconnection of integrated circuits

A chip package includes a substrate formed from a first die and its attendant wiring interconnections, having a first thermal coefficient of expansion. The first die includes primary input/output (I/O) interconnections for the chip package. Also provided is a second die that includes escape wiring formed on that die and coupled to the primary I/O interconnections through the first die. The second die has a second thermal coefficient of expansion similar to the first thermal coefficient of expansion. The chip package also includes connectors that couple the primary I/O interconnections of the first die to a second level package. An interposer may be provided to couple the primary I/O interconnections to the second level package. The second die is smaller than the first die. The peripheral area of the first die is left exposed when the second die is coupled to the first die so that sufficient I/O interconnections may be formed for the primary I/O interconnections on the first die. The second die provides and receives signals which may include the second die's primary I/O to and from the first die. Wiring may be shared between the first die and the second die in a manner optimal for design and manufacturing.

Bare die multiple dies for direct attach

A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.

Method of forming patterned polyimide films

An electrical interconnect structure for connecting a substrate to the next level of packaging or to a semiconductor device. The interconnect structure includes at least two layers of polymeric material, one of the layers having a capture pad and the second of the layers having a bonding pad electrically connected to the capture pad. The bonding pad and the second layer of polymeric material are at the same height so that the bonding pad is level with the second layer of polymeric material. Finally, there is a cap of electrically conducting metallization on the bonding pad and extending beyond the second layer of polymeric material. The cap is of a different composition than the bonding pad.

Interconnect structure having improved metallization

A thin-layer metallization structure in which the final gold layer is deposited by evaporation with the surface onto which it is evaporated maintained at an elevated temperature. By evaporating the uppermost gold layer of the structure at an elevated substrate temperature, the gold atoms have a higher mobility, causing the deposited gold to spread over the edge of the structure and cover the otherwise exposed edges, including the edge at the copper interface.

Process for corrosion free multi-layer metal conductors

A high density array of pinless electrical, spring connectors are supported in an electrically insulative carrier. The carrier has an array of cavity nests for receiving the spring connectors, locking them into a stable position and functioning as an electrical coupler between corresponding electrical contact pads in stacked modules.

Array of pinless connectors and a carrier therefor

In a multi-level wiring structure wires and vias are formed by an isotropic deposition of a conductive material, such as copper, on a dielectric base, such as a polyimide. In a preferred embodiment of the invention copper is electroplated to a thin seed conducting layer deposited on the surface of the dielectric base in which via openings have been formed. Openings in a resist formed on the surface of the dielectric base over the seed layer forms a pattern defining the wiring and via conductor features. Electroplated copper fills the via openings and wire pattern openings in the resist isotropically so that the upper surfaces of the wiring and vias are co-planar when the plating step is complete. In adding subsequent wiring levels, the resist is removed and the via conductor and wiring pattern covered with another dielectric layer which both encapsulates the conductors of the previous layer and serves as the base for the next level which is formed in the same manner as the previous level.

Growing community of inventors

Hopewell Junction, NY, United States of America

Umar M Ahmad