Hitachi Energy Ltd

Hitachi Energy Switzerland Ag

Audi Ag

Abb Schweiz Ag

Abb Power Grids Switzerland Ag

Umamaheswara Vemulapati

Florin Udrea

Jan Vobecky

Chiara Corvasce

Marco Bellini

Renato Minamisawa

Tobias Wikstroem

Ulrich Schlapbach

Friedhelm Bauer

Luca De-Michielis

Thomas Stiasny

Marina Antoniou

Neophytos Lophitis

Uwe Badstuebner

Disclosed is a power semiconductor device comprising a semiconductor wafer having a first main side and second main side. The semiconductor wafer comprises parallel thyristor cells, which each comprises (a) a cathode electrode and gate electrode on the first main side; (b) a cathode layer comprising a cathode region of a first conductivity type, forming an ohmic contact with the cathode electrode; (c) a first base layer of a second conductivity type, wherein the cathode region forms a p-n junction between the first base layer and cathode region; (d) a second base layer of the first conductivity type forming a second p-n junction with the first base layer; (e) an anode layer of the second conductivity type separated from the first base layer by the second base layer. The gate electrodes of the plurality of thyristor cells form a gate design comprising multiple polygons each comprising at least four struts.

Power semiconductor device

An insulated gate bipolar transistor includes a source electrode, a collector electrode, a source layer, a base layer, a drift layer and a collector layer. Trench gate electrodes extend through the base layer into the drift layer. A channel is located between the source layer, the base layer and the drift layer. A trench Schottky electrode is adjacent to one of the trench gate electrodes and includes an electrically conductive Schottky layer arranged lateral to the base layer and extends through the base layer into the drift layer. The Schottky layer is electrically connected to the source electrode. Collection areas are located in the drift layer at a respective trench gate electrode bottom of the trench gate electrodes or of the trench Schottky electrode. The Schottky layer forms a Schottky contact to the collection area at a contact area.

Insulated gate bipolar transistor including trench Schottky electrode

A reverse conducting power semiconductor device includes a plurality of thyristor cells and a freewheeling diode are integrated in a semiconductor wafer. The freewheeling diode includes a diode anode layer, a diode anode electrode, a diode cathode layer, and a diode cathode electrode. The diode cathode layer includes diode cathode layer segments, each of which is stripe-shaped and arranged within a corresponding stripe-shaped first diode anode layer segment such that a longitudinal main axis of each diode cathode layer segment extends along the longitudinal main axis of the corresponding one of the first diode anode layer segments.

Reverse conducting power semiconductor device and method for manufacturing the same

A power diode comprises a plurality of diode cells (). Each diode cell () comprises a first conductivity type first anode layer (), a first conductivity type second anode layer () having a lower doping concentration than the first anode layer () and being separated from an anode electrode layer () by the first anode layer (), a second conductivity type drift layer () forming a pn-junction with the second anode layer (), a second conductivity type cathode layer () being in direct contact with the cathode electrode layer (), and a cathode-side segmentation layer () being in direct contact with the cathode electrode layer (). A material of the cathode-side segmentation layer () is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (), is below 2·10cm, or a material of the cathode-side segmentation layer () is an insulating material. A horizontal cross-section through each diode cell () along a horizontal plane (K) comprises a first area where the horizontal plane (K) intersects the second anode layer () and a second area where the plane (K) intersects the drift layer ().

Segmented power diode structure with improved reverse recovery

An integrated gate-commutated thyristor (IGCT) includes a semiconductor wafer having a first main side and a second main side opposite to the first main side and a plurality of first type thyristor cells and second type thyristor cells. The cathode electrode of the first type thyristor cells forms an ohmic contact with the cathode region and the cathode electrode of the second type thyristor cells is insulated from the cathode region. A predefined percentage of second type thyristor cells of the overall amount of first type thyristor cells and second type thyristor cells in a segment ring is greater than 0% and less than or equal to 75%.

Integrated gate-commutated thyristor (IGCT)

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Umamaheswara Vemulapati