Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Ag

Osram Opto Semi-conductors Gmbh Co. Ohg

Ulrich Zehnder

Uwe Strauss

Dominik Eisert

Berthold Hahn

Volker Härle

Johannes Baur

Michael Fehrer

Johannes Völkl

Alfred Lell

Stefan Bader

Andreas Weimar

Raimund Oberschmid

Manfred Mundbrod-Vangerow

Ulrich Jacob

Frank Kühn

Werner Plass

Helmut Bolay

Martin Strassburg

Franz Eberhard

Volker Haerle

Marianne Ortmann

Andreas Weimer

Frank Kuehn

Frank Fischer

Siegfried Herrmann

Herbert Brunner

Matthias Sabathil

Lutz Höppel

Matthias Peter

Norbert Linder

Hans-Jürgen Lugauer

Rainer Butendeich

Tetsuya Taki

Ernst Nirschl

Magnus Ahlstedt

Andreas Waag

Andreas Leber

Thomas Litz

Gottfried Landwehr

Hans-J&uuml;rgen Lugauer

Reinhard Sedlmeier

Markus Keim

Ewald Karl Michael Günther

Thierry Baron

G&uuml;nter Reuscher

Ewald K M Günther

Thomas Bauer

Christoph Jonda

Jacob Ulrich

Hans-Peter Steinbr&uuml;ck

Mario Nagelstrasser

Volker HÄRLE

Manfred Mundbrod

Frank KÜHN

An optoelectronic semiconductor component comprising a semiconductor layer sequence () based on a nitride compound semiconductor and containing an n-doped region (), a p-doped region () and an active zone () arranged between the n-doped region () and the p-doped region () is specified. The p-doped region () comprises a p-type contact layer () composed of InAlGaN where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1 and x+y&#x2266;1. The p-type contact layer () adjoins a connection layer () composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer () has first domains () having a Ga-face orientation and second domains () having an N-face orientation at an interface with the connection layer ().

Optoelectronic semiconductor component

A semiconductor light-emitting diode () is proposed having at least one p-doped light-emitting diode layer (), an n-doped light-emitting diode layer () and an optically active zone () between the p-doped light-emitting diode layer () and the n-doped light-emitting diode layer (), having an oxide layer () consisting of a transparent conductive oxide, and having at least one mirror layer (), wherein the oxide layer () is disposed between the light-emitting diode layers () and the at least one mirror layer (), and comprises a first boundary surface () which faces the light-emitting diode layers () and a second boundary surface () which faces the at least one mirror layer (), and wherein the second boundary surface () of the oxide layer () has less roughness (R) than the first boundary surface () of the oxide layer ().

Semiconductor light-emitting diode and method for producing a semiconductor light-emitting diode

An optoelectronic component includes a carrier with a mounting side and having at least one functional element, at least one substrateless optoelectronic semiconductor chip with a top and an opposed bottom and is electrically conductive by way of the top and the bottom, wherein the bottom faces the mounting side and the semiconductor chip is mounted on the mounting side, and at least one structured electrical contact film located on the top.

Optoelectronic component

A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

Radiation-emitting semiconductor component and method for producing the semiconductor component

A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.

Method for producing an optoelectronic component

A radiation-emitting and/or -receiving semiconductor component comprising a semiconductor body (), which has an active zone () provided for radiation generation or for radiation reception, a lateral main direction of extent and a main area, and also a protective layer () arranged on the main area and a contact () arranged on the main area, the protective layer () being spaced apart from the contact in the lateral direction. A method for the application of a contact to a semiconductor body () is also disclosed.

Radiation-emitting and/or -receiving semiconductor component and method for the patterned application of a contact to a semiconductor body

An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers () of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers () of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (), for which the essentially non-radiating well layers () and the barrier layers () arranged in front form a superlattice.

Optical semiconductor device with multiple quantum well structure

A radiation-emitting semiconductor chip, having a multilayer structure () containing a radiation-emitting active layer (), and having a window layer (), which is transmissive to a radiation emitted by the active layer () and is arranged downstream of the multilayer structure () in the direction of a main radiating direction of the semiconductor component. The window layer () has at least one peripheral side area (), which, in the course from a first main area () facing the multilayer structure () in the direction toward a second main area () remote from the multilayer structure (), firstly has a first side area region () which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (). A peripheral side area () of the multilayer structure () and at least a part of the beveled, curved or stepped first side area region () are coated with a continuous electrically insulating layer (). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.

Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component

An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence () with a radiation-emitting active zone (), the semiconductor layer sequence () having sidewalls (). A connection contact () is provided for impressing current into the active zone. A first current expansion layer () adjoins a semiconductor layer () of the semiconductor layer sequence () and a second current expansion layer () is provided between the semiconductor layer sequence () and the connection contact (). The first current expansion layer () has a larger sheet resistance than the second current expansion layer () and forms an ohmic contact with the adjoining semiconductor layer (). The second current expansion layer () is applied to a partial region of the first current expansion layer () which is at a distance from the sidewalls ().

Optoelectronic component having a plurality of current expansion layers and method for producing it

This invention describes a radiation-emitting semiconductor component with the a multilayered structure () that contains a radiation-emitting active layer (), and a window () transparent to radiation that has a first principal face () and a second principal face () opposite the first principal face (), and whose first principal face () adjoins the multilayered structure (). At least one recess () is made in the window (), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window () or of the recess () is provided at least partially with a contact surface (). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings ().

Semiconductor component which emits radiation, and method for producing the same

Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure () comprising a radiation-emitting active layer (), with electrical contacts () for impressing a current in the multilayer structure () and with a radiotransparent window layer (). The window layer is arranged exclusively on the side of the multilayer structure () facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion () which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion () that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer () encompassing the second side wall portion () forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.

Radiation emitting semiconductor device

A light-emitting diode () has a lens body () that is fabricated from an inorganic solid. Fastened on the lens body () are semiconductor chips () that emit light beams (). Furthermore, the light-emitting diode () is provided with a housing () that can be screwed into a conventional lamp holder via a thread ().

Light-emitting diode and method for the production thereof

A semiconductor chip has a substrate that is in the form of a parallelepiped whose side surfaces are shaped as tilted parallelograms. Such a semiconductor chip has a high output efficiency and a homogeneous thermal load due to having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.

Method for producing a radiation-emitting semiconductor chip

Growing community of inventors

Wuppertal, Germany

Ulrich Zehnder