Infineon Technologies Ag

Infineon Technologies Austria Ag

Ulrich Schwarzer

Reinhold Bayerer

Bernhard Strzalkowski

Peter Kanschat

Uwe Jansen

Andre Arens

Marco Seibt

Hartmut Jasberg

A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an output current and an output voltage of the power semiconductor switch by a voltage source arrangement coupled to the input terminal. A gradient of switch-on edges of an output current and an output voltage is adjusted by a controllable current source arrangement that is coupled to the input terminal and generates a gate drive current. The profile of the gate drive current from one switching operation to a subsequent switching operation, beginning at a rise in the output current and ending at a decrease in the output voltage, is varied at most within a predefined tolerance band.

Method for driving power semiconductor switches

An embodiment of the invention relates to an apparatus including a magnetic device and a related method. A multilayer substrate is constructed with a winding formed in a metallic layer, an electrically insulating layer above the metallic layer, and a via formed in the electrically insulating layer to couple the winding to a circuit element positioned on the multilayer substrate. A depression is formed in the multilayer substrate, and a polymer solution, preferably an epoxy, containing a ferromagnetic component such as nanocrystaline nickel zinc ferrite is deposited within a mold positioned on a surface of the multilayer substrate above the winding and in the depression. An integrated circuit electrically coupled to the winding may be located on the multilayer substrate. The multilayer substrate may be a semiconductor substrate or a printed wiring board, and the circuit element may be an integrated circuit formed on the multilayer substrate.

Method of constructing inductors and transformers

An embodiment of the invention relates to a circuit assembly having the following components: a power transistor with a control terminal, a first load terminal and a second load terminal, the second load terminal having a floating potential; a driver circuit configured to generate control signals for the control terminal of the power transistor, the relevant reference potential for the driver circuit being the floating potential of the second load terminal; a planar metallization layer sited on or in a substrate and comprising a constant reference potential, a shielding plane isolated from the metallization layer, sited planar on or in the substrate such that it is capacitively coupled to the metallization layer; a power supply circuit for providing a supply voltage referenced to the floating potential of the second load terminal for the driver circuit, the power supply circuit comprising, circuited between the second load terminal and the shielding plane, a first series circuit including a first capacitor and a first diode.

Circuit assembly for gating a power semiconductor switch

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Warstein, Germany

Ulrich Schwarzer