Infineon Technologies Ag

Infineon Technologies Austria Ag

Micro Systems Engineering Gmbh

Honeywell International Inc.

Other

Airbus Operations Gmbh

Airbus Defence and Space Gmbh

Astrium Gmbh

Biotronik Crm Patent Ag

Technische Universitāt Wien

Technische Universitäet Wien

Piezocryst Advanced Sensories Gmbh

Ulrich Schmid

Michael Schneider

Thomas Grille

Ursula Hedenig

Achim Bittner

Alfons Dehe

Tobias Frischmuth

Dieter Schwanke

Manuel Dorfmeister

Peter Irsigler

Jens Peter Konrath

Markus Kahn

Daniel Maurer

Mirco Harnack

Stefan Krivec

Ronny Kern

Guenter Denifl

Laura Stoeber

Christoph Glacer

David Tumpold

Thomas Becker

Mikulas Jandak

Manfred Kaltenbacher

Ulrich Krumbein

Alois Friedberger

Jonathan Silvano De Sousa

Alexander Schricker

Gerhard Mueller

Tomas Neuzil

Martin Kluge

Thomas Ziemann

Günter Denifl

Stefan Ziegenhagen

Dimitri Telitschkin

Dietmar Kroeger

Peter Schmid

Christof Zarfl

Thomas Haas

Soeren Fricke

Eberhard Rose

Hana Krausova

Andreas Steininger

Nikolaus Kerö

Martin Horauer

Gregor Pobegen

Fabian Triendl

Georg Pfusterschmied

Yauheni Belahurau

Alexandros Elefsiniotis

Sylvicley Figueira Da Silva

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a first trench is formed in a silicon carbide layer. A second trench is formed in the silicon carbide layer to define a mesa in the silicon carbide layer between the first trench and the second trench. A first doped semiconductor material is formed in the first trench and a second doped semiconductor material is formed in the second trench. A third doped semiconductor material is formed over the mesa to define a heterojunction at an interface between the third doped semiconductor material and the mesa.

Semiconductor device

A sensor element includes a membrane structure suspended on a frame structure, wherein the membrane structure includes a membrane element and an actuator. The membrane structure is deflectable in a first stable deflection state and in a second stable deflection state and is operable in a resonance mode in at least one of the first and the second stable deflection states. The actuator is configured to deflect the membrane structure in a first actuation state into one of the first and the second stable deflection states, and to operate the membrane structure in a second actuation state in a resonance mode having an associated resonance frequency.

Sensor element, particle sensor device and method for detecting a particulate matter density

A micro-electro-mechanical systems (MEMS) device and method of fabricating the MEMS device are disclosed. The MEMS device comprises a substrate, one or more suspension structures connected to the substrate, one or more metallized layers on the one or more suspension structures, and one or more sense structures connected to the one or more suspension structures. The one or more metallized layers provide selectively adjusted damping of the one or more suspension structures.

MEMS sensors with selectively adjusted damping of suspension

A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.

Method for manufacturing a semiconductor device having a Schottky contact

A MEMS sensor device comprises a support substrate, a proof mass movably connected to the support substrate, a first drive comb fixedly connected to the support substrate in a first orientation and adjacent to the proof mass, and a second drive comb fixedly connected to the support substrate in a second orientation and adjacent to the proof mass. The second orientation is opposite of the first orientation such that the first and second drive combs face toward each other. A parallel plate sense electrode is located under the proof mass on the support substrate. The drive combs and the parallel plate sense electrode are each electrically charged and configured with respect to the proof mass such that a combination of a levitation force and a parallel plate force produces a linear out-of-plane actuation that depends only on an applied voltage.

MEMS out of plane actuator

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Micromechanical structure and method for manufacturing the same

An acoustic wave sensor may include: a continuous membrane deflectable by acoustic waves to be detected, and a piezoelectric layer provided on the membrane and including a plurality of piezoelectric layer portions respectively equipped with at least two individual electric contact structures configured to electrically connect the respective piezoelectric layer portions. Electric contact structures associated with different piezoelectric layer portions may be separated from each other.

Acoustic wave sensor

Diaphragm element arrangements including at least one bistable diaphragm element, which has a first stable state and a second stable state, and corresponding methods are provided. The bistable diaphragm element can be activated above a changeover threshold in order to change over between the first and the second stable state or below the changeover threshold.

Diaphragm element arrangement and related method

Aspects of a microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device, are discussed herein. The microelectromechanical device may include: a substrate; a diaphragm mechanically coupled to the substrate, the diaphragm comprising a stressed region to buckle the diaphragm into one of two geometrically stable positions; an actuator mechanically coupled to the diaphragm, the actuator comprising a piezoelectric layer over the diaphragm; a controller configured to provide an electrical control signal in response to a digital sound input; wherein the actuator is configured to receive the electrical control signal to exert a mechanical piezoelectric force on the diaphragm via the piezoelectric layer to move the diaphragm to create a sound wave.

Microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device

A microelectromechanical loudspeaker may include: a plurality of elementary loudspeakers each including a drive unit and a diaphragm deflectable by the drive unit, and a controller configured to respectively supply control signals to the drive units. The drive units may be respectively configured to deflect the corresponding diaphragms according to the respective control signals supplied by the controller to generate acoustic waves. The control signal supplied to at least one control unit may have at least one local extremum and a global extremum of a curvature of the control signal with a highest absolute value of the curvature may be located at a position of the control signal preceding a position of the at least one local extremum of the control signal.

Microelectromechanical loudspeaker

According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.

Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride

An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.

Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer

A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

Micromechanical structure comprising carbon material and method for fabricating the same

A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.

Micromechanical structure and method for fabricating the same

An energy harvester for an aircraft comprises a first portion, a movable element and a kinetic-to-electric-energy-converter. The first portion includes a charge collecting device having an electrical permittivity different to that of air. The charge collecting device is configured to be exposed to an air flow. The movable element is configured to be driven by the charge of the charge collecting device, and the kinetic-to-electric-energy-converter is configured to generate energy by the movement of the movable element.

Resonant energy harvester, aircraft component comprising the resonant energy harvester and an aircraft comprising the resonant energy harvester or the aircraft component

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Vienna, Austria

Ulrich Schmid