Eads Deutschland Gmbh

Daimler Chrysler Ag

Airbus Defence and Space Gmbh

Other

Conti Temic Microelectronic Gmbh

Temic Telefunken Microelectronic Gmbh

Mbda Deutschland Gmbh

Ulrich Prechtel

Helmut Seidel

Josef Schalk

Volker Ziegler

Matthias Aikele

Rainer Freitag

Kay Dittrich

Franz Stadler

Karin Bauer

Thomas Koerwien

Thomas Becker

Oliver Nagler

Heinz-Peter Feldle

Achim Bittner

Thomas Körwien

Peter Knittl

Martin Kluge

Michael Sabielny

Herbert Zippold

Manfred Weinacht

Ralf Voss

Ernst Feurer

Bernhard Schoenlinner

Wilhelm Wulbrand

Joerg Sander

Konrad Kapser

Erwin Stenzel

Thomas Schuster

Jörg Sander

Bernhard Schönlinner

Albert Engelhardt

Jirka Klaue

Askold Meusling

Roland Hilser

Bernhard Hartmann

Jordi Sabater

Karl K&uuml;hl

Bernhardt Schoenlinner

Armin Stehle

Markus Rothenhaeusler

Sebastian Toelg

Richard KÖRBER

Kay W Dittrich

Markus Rothenhäusler

Ulrich Schmid

Bernhardt SCHÖNLINNER

The present disclosure relates to an electronic high-frequency component for accommodating micro-devices, having at least two housing parts which are joined together by a metal frame and which enclose a cavity, and at least one input signal line configured to introduce electrical high-frequency signals from outside of the component into the cavity. The input signal line is connected to a signal line via. Furthermore, the high-frequency component also has at least one short-circuit via which electrically connects the metal frame to at least one of the housing parts of the component.

Electronic component

A method is provided for manufacturing a radome. The method has the following steps: creation of a contoured fit of at least one section of an inner surface of a wall of the radome; arrangement of a plurality of planar photosensitive semiconductor elements on an outer surface of the contoured fit; placement of the contoured fit with the plurality of planar photosensitive semiconductor elements on the at least one section of the inner surface of the wall; establishing of a connection between the plurality of planar photosensitive semiconductor elements and the wall; and removal of the contoured fit from the radome. This method enables the simple manufacture of a radome with a layer having several semiconductor elements for the electromagnetic shielding of the interior of the radome.

Method for manufacturing a radome

A monitoring device for a repair patch that can be placed on or in a wall of an aircraft to repair a defect has a sensor device for detecting properties of the repair patch placed in the wall, an energy supply device for supplying energy at least to the sensor device, and a communication device so as to read out the sensor data. A repair kit that can be placed in or on a wall of an aircraft to repair defects comprises a repair patch for repairing a defect in or on a wall of an aircraft and also comprises a monitoring device. A method for monitoring a repair patch in or on a wall of an aircraft by means of a monitoring device comprises the steps of detecting a measurement phase on the basis of the amount of energy provided by the energy supply device, measuring load parameters in and/or on the repair patch during the measurement phase, and reading out the load parameters.

Monitoring device for repair patches, repair kit, and method for monitoring a repair patch

A hermetically sealed HF front end (e.g. a transmission/reception module) in a multilayer structure that includes electronic components is provided. The multilayer structure contains a plurality of substrates stacked one above the other and carrying the components. Grooves are formed in the substrates and sealing elements are provided between the substrates, which sealing elements engage in the grooves, and the substrates are soldered together.

Hermetically sealed radio-frequency front end

A high frequency-MEMS switch with a bendable switching element, whose one end is placed on a high resistivity substrate provided with an insulator, furthermore with a contact electrode to supply charge carriers to the substrate, wherein an electrical field can be produced to create an electrostatic bending force on the switching element between the switching element and the substrate, wherein at least one implantation zone is formed in the substrate, essentially directly beneath the insulator, the implantation zone is contacted with the contact electrode, which is located above the insulator, through an opening in the insulator, and also has ohmic contact with the substrate.

HF-MEMS switch

A high-frequency MEMS switch comprises a signal conductor which is arranged on a substrate and an oblong switching element which has a bent elastic bending area and is fastened on the substrate in a cantilevered manner. An electrode arrangement generates an electrostatic force which bends the switching element toward the signal conductor. The switching element is arranged longitudinally parallel to the signal conductor, and has a contact area which extends transversely to the switch element over the signal conductor. Under the effect of the electrostatic force, the elastic bending area of the switching element progressively approaches the electrode arrangement in a direction parallel to the signal line. The switching element has, for example, two mutually parallel extending switching arms, which are mutually connected by a bridge as the contact area and are arranged on both sides of the signal line and parallel thereto.

High frequency MEMS switch having a bent switching element and method for its production

A micromechanical capacitive acceleration sensor is described for picking up the acceleration of an object in at least one direction. The sensor includes a frame structure (), a sensor inertia mass () made of a wafer and movably mounted relative to the frame structure () about a rotation axis, and a capacitive pick-up unit () for producing at least one capacitive output signal representing the position of the sensor mass () relative to the frame structure (). The sensor inertia mass () has a center of gravity which offset relative to the rotation axis in a direction perpendicularly to a wafer plane for measuring accelerations laterally to the wafer plane. The sensor mass () and the frame structure () are made monolithically of one single crystal silicon wafer. A cover section () forms a common connector plane () for the connection of capacitor electrodes (). Torqueable elements () form an electrically conducting bearing device for the sensor mass ().

Micromechanical capacitive acceleration sensor

A self-testing sensor (especially to measure an angular rate or acceleration) includes a resonant structure, an actor unit configured to excite the structure to a first periodic vibration, a piezoresistive element configured to generate an output signal that depends on the measured quantity, and an isolator configured to isolate a test signal component from the output signal, whereby the test signal component is generated by a second periodic vibration of the structure superposed on the first vibration. A device for self-testing a sensor includes an isolator configured to isolate a test signal component superposed on a useful signal component from the periodic output signal of the sensor, and it includes a comparator configured to compare the test signal component with a predefined value or a test signal fed to the sensor. For the self-test, a second periodic vibration is superposed on a first vibration of the structure, and an output signal containing information on the measured quantity is determined. A test signal component contained in the output signal is monitored.

Sensor having a resonance structure, especially an acceleration or rotation rate sensor, and a device for carrying out a self-test

A micromechanical enclosure suitable for micromechanical sensors, particularly acceleration sensors in the field of automotive vehicles, includes a micromechanical structure on a substrate, a conductor track layer connected to the micromechanical structure on the main surface of the substrate, a cover that covers a part of the main surface of the substrate, and a level compensation layer arranged next to the conductor track layer beneath the contact area during the manufacture of the wafer. A planarizing layer, which forms a level surface, may additionally be applied above this, to form a level area on the substrate which can easily be joined to a level area of the cover by means of a metallic wafer bond. This achieves small overall dimensions and avoids a glass frit bond.

Micromechanical enclosure

A microsensor with a resonator structure, which is excited by first electrical signals to oscillate and emits second electrical signals in dependence on the measuring variable, wherein a heating element, supplied with at least one of the first electrical signals, is arranged on the resonator structure for the thermal excitations of oscillations. For the thermal excitation of lateral oscillations in a microsensor with a resonator structure, the microsensor is provided at one oscillating part of the resonator structure with at least two regions that are thermally separated by a zone with reduced heat conductance, and the heating element is arranged on one of the regions. This type of arrangements permits the excitation of the resonator structure to lateral oscillations if the heating element is supplied with corresponding current pulses. It is advantageous if a receiving element is arranged on at least one of the other regions to detect the oscillation amplitude.

Microsensor with a resonator structure

A system for measuring acceleration in three axes comprises four individual sensors arranged in a rectangle on a common substrate with each having one main sensitivity axis. Each individual sensor has a seismic mass in the form of a cantilevered paddle connected by a bending beam to an outer frame and having a center of gravity. Each beam is arranged parallel to the substrate surface and each contains means for measuring the bending that occurs when acceleration forces act upon the system. The actual acceleration occurring on each axis can then be determined as a function of the error angle formed between the sensitivity axis and the normal to the substrate surface.

System for the measurement of acceleration in three axes

Growing community of inventors

Munich, Germany

Ulrich Prechtel