Carl Zeiss Microscopy Gmbh

Alis Corporation

Carl Zeiss Smt Gmbh

Carl Zeiss Nts Gmbh

Nanotools Gmbh

Ulrich Mantz

Billy W Ward

Raymond Hill

Randall G Percival

Louis S Farkas, Iii

John Anthony Notte, Iv

Klaus Edinger

Lars Markwort

Dirk Aderhold

Volker Drexel

Bernd Irmer

Christian Penzkofer

Rainer K Knippelmeyer

Lawrence Scipioni

Michael Steigerwald

Shawn McVey

Hans-Michael Stiepan

Deying Xia

John A Notte

Christoph Riedesel

Ulrich Wagemann

Andy Zott

John Morgan

Wilhelm Kuehn

Brett Lewis

Louis Farkas

An inspection system serves to qualify semiconductor structures. The inspection system has an ion beam source for space-resolved exposition of the structures to be qualified with an ion beam. The inspection system also includes a secondary ion detection device with a mass spectrometer. The mass spectrometer is configured to measure an ion mass to charge ratio in a given bandwidth.

Inspection system and inspection method to qualify semiconductor structures

In an aspect, a plurality of parameters characteristic of the patterned wafer are determined based on measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least one used structure and at least one auxiliary structure. The parameters are determined based on intensity values measured during the intensity measurements for respectively different combinations of wavelength, polarization and/or order of diffraction, and also on the basis of correspondingly calculated intensity values, with a mathematical optimization method being applied.

Method and device for characterizing a wafer patterned using at least one lithography step

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.

Electron beam source and method of manufacturing the same

A first instrument () is used to image a first semiconductor article having a trench () of defined cross-section, while a second instrument () is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench () of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.

Cross-section systems and methods

Growing community of inventors

Schelklingen, Germany

Ulrich Mantz