Tel Solar Ag

Universite De Neuchatel, Institut De Microtechnique

Oc Oerlikon Balzers Ag

Oerlikon Trading Ag, Trubbach

Fyzikalni Ustave Av Cr, V.v.i.

Oerlikon Solar Ag, Trubbach

Ulrich Kroll

Johannes Meier

Daniel Borrello

Evelyne Vallat-Sauvain

Jacques Schmitt

Christoph Hollenstein

Stefano Benagli

Markus Poppeller

Juliette Ballutaud

Alan Howling

Daniel Lepori

Tobias Roschek

Neda Neykova

Cedric Bucher

Cédric Bucher

Boris Legradic

Johann Meier

Oleg Babchenko

Adam Purkrt

Jakub Holovsky

Zdenek Remes

Ales Poruba

Karel Hruska

Milan Vanecek

Jean-Baptiste Orhan

Jerome Steinhauser

Yassine Djeridane

Jochen Hoetzel

Miguel Marmelo

Giovanni Monteduro

Castens Lucie

The present invention provides an improved thin film solar cell, wherein at least one additional resistive transparent conductive oxide (TCO) layer is incorporated into the solar cell. The additional resistive TCO electrically separates the conductive TCO layers acting as electrodes of such a cell and thus decreases or prevents performance losses. Furthermore, methods for the production of such solar cells are disclosed.

Method for obtaining high performance thin film devices deposited on highly textured substrates

There is provided a method of coating a substrate with a zinc oxide film. The method includes (a) providing a substrate with at least one substantially flat surface, (b) subjecting the surface at least partially to a plasma-etching process, and (c) depositing on the etched surface, a layer that includes zinc oxide. The method is particularly suitable for manufacturing solar cells.

Method of coating a substrate

A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a &#x3bc;c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

High efficiency micromorph tandem cells

A photovoltaic device is provided that includes a substrate, a first transparent conductive layer positioned on the substrate, a plurality of transparent conductive rods positioned on the first transparent conductive layer and having a growth direction, the growth direction extending in a direction away from the substrate, a photovoltaically active layer covering the plurality of transparent conductive rods rods and a conductive layer positioned on the photovoltaically active layer.

Photovoltaic cell and methods for producing a photovoltaic cell

A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.

Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance

A remote plasma source comprises a first plate-like electrode () and a second plate-like electrode () which are arranged in parallelism and mutually electrically DC isolated. The two electrodes () are operationally connected to an Rf generator (). The first electrode () has a surface which is freely exposed to a substrate holder () and has a pattern of through-openings () distributed along its surface extent.

Plasma treatment apparatus and method for plasma-assisted treatment of substrates

So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound at least one of the adjacent layers of doped silicon material is conceived as a an amorphous layer.

Method for large-scale manufacturing of photovoltaic cells for a converter panel and photovoltaic converter panel

A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Method for producing semi-conducting devices and devices obtained with this method

The process according to the invention makes it possible to deposit a transparent conductive oxide film on a toughened glass substrate placed inside a chamber. It consists in providing sources containing an oxygen-based liquid compound, a liquid compound of the metal intended to form the oxide, and a dopant in gaseous or liquid form, respectively; establishing a temperature between 130 and 300&#xb0; C. and a pressure between 0.01 and 2 mbar in the chamber; and then bringing said sources into communication with the chamber, which has the effect of vaporizing the liquids at their surface, of drawing them up into the chamber without having to use a carrier gas, and of making them react therein with the dopant so that the oxide layer is formed on the substrate.

Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate

The device (,) comprises a deposition chamber (,) containing two electrodes (,), one of which comprises a support (,) for a substrate (,) and is earthed, the other being connected to an electric radio frequency generator (,). The device includes a mechanism (,) for extracting gas from the chamber (,) and a mechanism (,) for supplying gas. The device also comprises a mechanism for purification (,) of the gases introduced into the chamber, these a mechanism being arranged so as to reduce the number of oxygen atoms contained in the deposition gas, such gas being made up of silane, hydrogen and/or argon. The procedure consists of creating a vacuum in the deposition chamber (,), purifying the gases using purification a mechanism (,), introducing these purified gases into the chamber (,), then creating a plasma between the electrodes (,). A film of intrinsic microcrystalline silicon in then deposited on the substrate.

Photovoltaic cell and method of producing that cell

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Corcelles, Switzerland

Ulrich Kroll