Ixys Corporation

Other

Ulrich Kelberlau

Nathan Zommer

Peter Ingram

Markus Bickel

Subhas C Bose Jayappa Veeramma

A power device includes a semiconductor substrate of first conductivity having an upper surface and a lower surface. An isolation diffusion region of second conductivity is provided at a periphery of the substrate and extends from the upper surface to the lower surface of the substrate. The isolation diffusion region has a first surface corresponding to the upper surface of the substrate and a second surface corresponding to the lower surface. A peripheral junction region of second conductivity is formed at least partly within the isolation diffusion region and formed proximate the first surface of the isolation diffusion region. First and second terminals are provided.

Breakdown voltage for power devices

An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.

Over charge protection device

A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.

Method for fabricating forward and reverse blocking devices

A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of the substrate. The substrate is annealed for a first given time to drive the dopants from the first and second dopants sources into the substrate. The first and second dopant sources are removed from the upper and lower surfaces of the substrate. The substrate is annealed for a second given time to homogenize dopant concentration within the substrate after the first and second dopant sources have been removed, where the annealing the substrate for the second given time results in out-diffusion of dopants proximate the upper and lower surfaces of the substrate. Compensation dopants are provided into the substrate after annealing the substrate for the second given time to compensate the out-diffusion of the dopants proximate the upper and lower surfaces. The dopants driven into the substrate define an isolation diffusion structure that extends from the upper surface to the lower surface.

High voltage power device with low diffusion pipe resistance

A fast switching diode includes an n&#x2212; layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n&#x2212; layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n&#x2212; layer, respectively, and extend from the upper surface of the n&#x2212; layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n&#x2212; layer. A second electrode is provided proximate the lower surface of the n&#x2212; layer.

Fast switching diode with low leakage current

A power device includes a substrate assembly including an upper surface and a lower surface. The substrate assembly includes a first layer and a second layer. The first layer overlies the second layer and has different conductivity than the second layer. A first electrode is provided proximate the upper surface. A second electrode is provided proximate the upper surface and is spaced apart from the first electrode. The second layer is configured to provide a current path between the first and second electrodes.

Power device having electrodes on a top surface thereof

Forward and reverse blocking devices

A switching device is described having a semiconductor substrate with a front side and a back side. The switching device includes a first transistor which includes a first region adjacent the front side, a second region within the first region, the semiconductor substrate, and at least one island region adjacent the backside. The switching device also includes a second transistor which includes the first region, the second region, the semiconductor substrate, and a third region coupled to the at least one island region.

Growing community of inventors

Lampertheim, Germany

Ulrich Kelberlau