Osram Gmbh

Osram Opto Semiconductors Gmbh

Ulrich Jacob

Berthold Hahn

Uwe Strauss

Dominik Eisert

Johannes Baur

Hans-Jürgen Lugauer

Michael Fehrer

Ulrich Zehnder

Johannes Völkl

Manfred Mundbrod-Vangerow

Werner Plass

Volker Härle

Gertrud Kräuter

Andreas Plössl

Raimund Oberschmid

Volker HÄRLE

A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.

Radiation-emitting optical component

A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same

A radiation-emitting semiconductor component, having a layer structure () which includes an active layer () which, in operation, emits radiation with a spectral distribution (), and electrical contacts () for applying a current to the layer structure (), includes a coating layer () which at least partially surrounds the active layer () and holds back a short-wave component of the emitted radiation ().

A light-emitting diode chip () comprises a GaN-based, radiation-emitting epitaxial layer sequence (), an active region (), an n-doped layer () and a p-doped layer (). The p-doped layer () is provided, on its main surface () facing away from the active region (), with a reflective contact metallization () comprising a radioparent contact layer () and a reflective layer (). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same

A light-emitting diode () has a lens body () that is fabricated from an inorganic solid. Fastened on the lens body () are semiconductor chips () that emit light beams (). Furthermore, the light-emitting diode () is provided with a housing () that can be screwed into a conventional lamp holder via a thread ().

Light-emitting diode and method for the production thereof

A light-emitting chip () has a lens-type coupling-out window (), whose base area () is provided with a mirror area (). Arranged on a coupling-out area () of the coupling-out window () is a layer sequence (), with a photon-emitting pn junction (). The photons emitted by the pn junction are reflected at the mirror area () and can leave the coupling-out window () through the coupling-out area ().

Radiation-emitting chip

Proposed for high-performance light-emitting diodes are semiconductor chips () whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.

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Wuppertal, Germany

Ulrich Jacob