Novaled Gmbh

Novaled Ag

Other

Ulrich Heggemann

Markus Hummert

Sascha Dorok

Thomas Rosenow

Mauro Furno

Carsten Rothe

Ansgar Werner

Horst Hartmann

Olaf Zeika

Andrea Lux

Omrane Fadhel

Francois Cardinali

Steffen Willmann

Manuela Klose

Jan Blochwitz-Nimoth

Domagoj Pavicic

Julien Frey

Michael Hofmann

Vygintas Jankus

Steffen Runge

Ulrich Denker

Rudolf Lessmann

Katja Gräf

Max Peter Nüllen

Ina Faltin

Ina Steudtner

Achim Bruch

Christiane Köhn

Vladimir Uvarov

Ulrike Schliebe

Piermaria Pinter

Max P NÜLLEN

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising

Electronic semiconducting device, method for preparing the electronic semiconducting device and compound

Compounds, including metal borate compounds, and electronic semiconducting devices including one or more of the compounds. Compounds may be used in a hole transport layer of the electronic semiconducting devices. Display devices, which may include a plurality of OLED pixels. The OLED pixels may include one or more compounds, including metal borate compounds.

Electronic semiconducting device and method for preparing the electronic semiconducting device

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

The present invention relates to an electronic device comprising at least one layer comprising a borate salt, wherein the borate salt is comprised in the layer comprising the borate salt In an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the layer, a display device comprising the same and a method for preparing the same.

Electronic device, method for preparing the same and display device comprising the same

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib). 

The present invention is directed to a semiconducting material comprising: i) a compound according to formula (I) wherein R, Rand Rare independently selected from C-C-alkyl, C-Ccycloalkyl, C-C-heteroalkyl, C-C-aryl, C-C-heteroaryl, C-C-alkoxy, C-C-cycloalkyloxy, C-Caryloxy, and from structural unit having general formula E-A-, wherein&#x2014;A is a C-Cphenylene spacer unit, and&#x2014;E is an electron transporting unit that is selected from C-Caryl and C-Cheteroaryl comprising up to 6 heteroatoms independently selected from O, S, P, Si and B and that comprises a conjugated system of at least 10 delocalized electrons, and&#x2014;at least one group selected from R, Rand Rhas the general formula E-A-; and ii) at least one complex of a monovalent metal having formula (II) wherein&#x2014;Mis a positive metal ion bearing a single elementary charge, and each of A, A, Aand Ais independently selected from H, substituted or unsubstituted C-Caryl and substituted or unsubstituted C-Cheteroaryl, wherein a heteroaryl ring of at least 5 ring-forming atoms of the substituted or unsubstituted C-Cheteroaryl comprises at least one hetero atom selected from O, S and N. 

Semiconducting material comprising a phosphine oxide matrix and metal salt

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib) wherein A, A, Aand Aare independently selected from CO, SOor POR; R=electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated Cto Calkyl, halogenated or perhalogenated Cto Caryl, or halogenated or perhalogenated heteroaryl with 5 to 20 ring-forming atoms; B, B, Band Bare same or independently selected from substituted or unsubstituted Cto Calkyl, substituted or unsubstituted Cto Cheteroalkyl, substituted or unsubstituted Cto Caryl, substituted or unsubstituted Cto Cheteroaryl, or Band Bform a ring; and b) p-dopants consisting of Li cation and an anion selected from perchlorate and tetrafluoroborate are excluded, and the first hole transport layer comprises a sublayer, wherein the electrical dopant is comprised in an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the sublayer, and a method for preparing the same. 

The present invention relates to a display device comprising&#x2014;a plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers&#x2014;is arranged between and in contact with the cathode and the anode, and&#x2014;comprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron transport layer, and&#x2014;a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, the first hole transport layer is provided in the stack of organic layers as a common hole transport layer shared by the plurality of OLED pixels, and the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less, a method for preparing the display device and a chemical compound for use therein.

Active OLED display, method for preparing an active OLED display and compound

The invention relates to an electronic device comprising a compound having Formula (1): AB(1), wherein A is a structural moiety that consists of at least two atoms and comprises a conjugated system of delocalized electrons, each B is independently selected from an imine functional group (1a), wherein R, R, R, Rare independently selected from C-Calkyl, C-Calkenyl, C-Calkinyl, C-Ccycloalkyl, C-Caryl, C-Cheteroaryl, C-Carylalkyl, C-Cheteroarylalkyl, the wave line represents a covalent bond to the imine nitrogen atom, G is in each group (1a) independently selected from a quarternary carbon atom and from a cyclopropenylidene structural moiety, x is an integer equal one or higher, preferably equal two or higher, and the lone electron pair of the imine nitrogen atom and/or the pi-electrons of the imine double bond of at least one group B is conjugated with the conjugated system of delocalized electrons comprised in the structural moiety A, with the proviso that two or more of the substituents R, R, R, Rmay be connected to form a ring that may contain also unsaturation and, if any of the substituents R, R, R, Rcomprises two or more carbon atoms, up to one third of the overall count of the carbon atoms in the substituent or in any ring formed by two connected substituents can be replaced with heteroatoms independently selected from O, S, N and B as well as to an electrically semiconducting material and a compound for use in the electronic device. 

Electronic device and compound

Provided are processes for preparing an electrically doped semiconducting material that includes a [3]-radialene p-dopant. Also provided are processes for preparing an electronic device containing a layer that includes a [3]-radialene p-dopant. The processes may include (i) loading an evaporation source with a [3]-radialene p-dopant and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure. The [3]-radialene p-dopant may be selected from compounds having a structure according to formula (I) herein.

Substituted 1,2,3-triylidenetris(cyanomethanylylidene) cyclopropanes for VTE, electronic devices and semiconducting materials using them

The present invention relates to an electronic device comprising a compound according to formula 1 A-B (1) and wherein &#x2014;Aris a C6-C18 arylene, which can be monocyclic or polycyclic and may be optionally substituted by one or more C-C-alkyl or C-C-cycloalkyl groups, &#x2014;Aris a C6-C18 arene skeleton, optionally substituted with electron donating groups R, &#x2014;Band Bare independently selected from B and Ar, &#x2014;Bis independently selected from the same group as B, &#x2014;R, R, Rare independently selected from alkyl, arylalkyl, cycloalkyl, aryl, dialkylamino, - x is selected from 0, 1, 2 and 3, wherein for x&#x3e;1 each Armay be different, - y is a non-zero integer up to the overall count of valence sites on the arene skeleton, - z is a integer from zero up to the overall count of valence sites on the arene skeleton minus y; as well as a respective compound according to formula A-B. 

The present invention relates to the use of heterocyclic compounds as the charge transport material, blocker material or light-scattering material in electronic, optoelectronic or electroluminescent components.

Heterocyclic compounds and the use thereof in electronic and optoelectronic components

The present invention relates new compounds and to an organic electronic device comprising at least one substantially organic layer comprising a non fully conjugated chemical compound, which compound is preferably used in electron transport layers, electron injection layers. The invention also includes a process for preparing an organic electronic device, wherein the substantially organic layer comprising a non fully conjugated chemical compound is deposited on a first layer, and a second layer is deposited on the substantially organic layer, preferably a cathode being deposited on the substantially organic layer comprising the non fully conjugated chemical compound.

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Dresden, Germany

Ulrich Heggemann