Siemens Aktiengesellschaft

Ulrich Goesele

Reinhard J Stengl

Christine Fellinger

A semiconductor region that is inserted into a semiconductor member is provided, the latter being separated from the former by a planar pn junction including a first, more highly doped sub-region and a second, more lightly doped sub-region that is limited by a part of the pn junction that gradually approaches a boundary surface of the semiconductor member. An electrode contacts the semiconductor region and covers a part of the second sub-region and extends toward the lateral limitation of the semiconductor region to such an extent that, given the application of a voltage inhibiting the pn junction the space charge zone forming thereat has its edge lying in the boundary surface just reaching the electrode edge given a reduced breakdown voltage.

Semiconductor component comprising a planar pn-junction

A method for the manufacture of a pn junction having a high breakdown voltage at the boundary surface of a semiconductor body, utilizing a mask which has a relatively large opening for introducing a dopant therethrough into the semiconductor body, the mask having a marginal edge which extends laterally beyond the edge of the relatively large opening. In the marginal edge, the mask is provided with smaller, auxiliary openings, the openings being sized and spaced such that lesser amounts of dopant pass through the opening as the distance of the auxiliary openings from the edge of the relatively larger opening increases. Upon introducing the dopant into the semiconductor body through the mask, there is generated a doping profile which gradually approaches the boundary surface with increasing distance from the edge of the relatively large opening.

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Leinfelden-Echterdingen, Germany

Ulrich Goesele