Novaled Gmbh

Novaled Ag

Ulrich Denker

Volodymyr Senkovskyy

Carsten Rothe

Karl Leo

Jan Birnstock

Qiang Huang

Omrane Fadhel

Francois Cardinali

Julien Frey

Tobias Canzler

Stefan Zott

Pierre Seidenglanz

Ansgar Werner

Benjamin Schulze

Thomas Rosenow

Ulrich Heggemann

Domagoj Pavicic

Kentaro Harada

Vygintas Jankus

Mike Zoellner

Regina Luschtinetz

Jens Wutke

Katja Gräf

Bodo Wallikewitz

Tomas Kalisz

Mike Zöllner

Martin Ammann

Johannes Scholz

Gufeng He

Elena GALÁN GARCÍA

Anne Fadhel

Francisco Bloom

Peter Robaschik

Jéròme Ganier

Jens Angermann

Kai Gilge

The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C-Ccondensed aryl group and/or at least one unsubstituted or substituted C-Cheteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a Cto Csilyl group, (iv) a Cto Calkyl group, (v) a C to Calkylsilyl group, (vi) a Cto Carylsilyl group, (vii) a Cto Ccycloalkyl group, (viii) a Cto Cheterocycloalkyl group, (ix) a Cto Caiyl group, (x) a Cto Cheteroaryl group, (xi) a Cto Cperfluoro-hydrocarbyl group, or (xii) a Cto Ctrifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ≥0 and ≤2 Debye; and ii) a molecular weight in the range of ≥400 and ≤1,800; and bb) a metal borate compound; b) transferring the first composition from the solid phase into the gas phase in a vacuum chamber; and c) depositing the first composition on a substrate to form the organic semiconducting layer; a composition for use therein, and an organic electronic device prepared this way.

Method for preparing an organic semiconducting layer, a composition for use therein and an organic electronic device

Organic electroluminescent device comprising an anode, a cathode, at least one emission layer and an organic semiconducting layer; wherein the organic semiconducting layer is arranged between the at least one emission layer and the cathode; wherein the organic semiconducting layer comprises; a) a first organic compound comprising a first Cto Carene structural moiety and/or a first Cto Cheteroarene structural moiety, wherein i) the dipole moment of the first organic compound, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, is from 0 to 2.5 Debye; and ii) the LUMO energy level of the first organic compound in the absolute scale taking vacuum energy level as zero, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, is in the range from −1.7 eV to −2.1 eV; and b) a second organic compound comprising a second Cto Carene structural moiety and/or a second Cto Cheteroarene structural moiety and in addition at least one polar group selected from phosphine oxide and phosphine sulfide, wherein in) the dipole moment of the second organic compound, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, is from 1.5 to 10 Debye; and iv) the LUMO energy level of the second organic compound in the absolute scale taking vacuum energy level as zero is less than 0.25 eV higher or lower than the LUMO energy level of the first organic compound; wherein it is provided that the first organic compound and the second organic compound are different from each other.

Organic electroluminescent device and a solid composition for use therein

The present invention is directed to a semiconducting material comprising: i) a compound according to formula (I) wherein R, Rand Rare independently selected from C-C-alkyl, C-Ccycloalkyl, C-C-heteroalkyl, C-C-aryl, C-C-heteroaryl, C-C-alkoxy, C-C-cycloalkyloxy, C-Caryloxy, and from structural unit having general formula E-A-, wherein&#x2014;A is a C-Cphenylene spacer unit, and&#x2014;E is an electron transporting unit that is selected from C-Caryl and C-Cheteroaryl comprising up to 6 heteroatoms independently selected from O, S, P, Si and B and that comprises a conjugated system of at least 10 delocalized electrons, and&#x2014;at least one group selected from R, Rand Rhas the general formula E-A-; and ii) at least one complex of a monovalent metal having formula (II) wherein&#x2014;Mis a positive metal ion bearing a single elementary charge, and each of A, A, Aand Ais independently selected from H, substituted or unsubstituted C-Caryl and substituted or unsubstituted C-Cheteroaryl, wherein a heteroaryl ring of at least 5 ring-forming atoms of the substituted or unsubstituted C-Cheteroaryl comprises at least one hetero atom selected from O, S and N. 

Semiconducting material comprising a phosphine oxide matrix and metal salt

The present invention is directed to matrix compounds and an organic light-emitting diode (OLED) comprising an emission layer and an electron transport layer stack of at least two electron transport layers, wherein a first electron transport layer and a second electron transport layer comprises at least one matrix compound, wherein the matrix compound or compounds of the first electron transport layer is/are different to the matrix compound or compounds of the second electron transport layer; and in addition, the first electron transport layer comprises a dopant of a lithium halide and/or lithium organic complex; and the second electron transport layer is free of a dopant; wherein at least one matrix compound of the second electron transport layer having the chemical formula Ia, Ib and/or Ic: (Ia) (Ib) (Ic) wherein Ar=substituted or unsubstituted arylene with 6 to 20 ring-forming carbon atoms; or carbazolylene; ET=substituted or unsubstituted aryl group with 13 to 40 ring-forming carbon atoms; or a substituted or unsubstituted heteroaryl group with 14 to 40 ring-forming atoms. 

Organic light-emitting diode comprising different matrix compounds in the first and second electron transport layer

The invention relates to electrically doped semiconducting material comprising iii) at least one electrical dopant selected from metal salts consisting of at least one metal cation and at least one anion and iv) at least one matrix compound of formula 1 wherein each of R, R, R, Ris independently selected from H, C-Calkyl, C-Chaloalkyl and C-Caryl or both substituents on the same aromatic ring of the xanthene skeleton are hydrocarbyl groups linked with each other to form together an anelated divalent C-Chydrocarbyl group and A and A' are independently selected from C-Cheteroaryl group comprising at least one sphybridized nitrogen atom as well as an electronic device and a compound.

Electrically doped organic semiconducting material and organic light emitting device comprising it

The invention relates to a semiconducting material comprising (i) in substantially elemental form, an electropositive element selected from alkaline metals, alkaline earth metals, rare earth metals, and transition metals, and (ii) at least one first compound which is a compound comprising at least one polar group selected from phosphine oxide group or diazole group; a process for manufacturing the semiconducting material; an electronic device comprising a cathode, an anode and the semiconducting material.

N-doped semiconducting material comprising polar matrix and metal dopant

Organic electroluminescent devices and components containing the organic electroluminescent devices are provided herein. The organic electroluminescent devices include a substrate, a first light emitting unit, a second light emitting unit, a first electrode, and a second electrode. The light emitting units are positioned between the first and second electrode. The light emitting units have light emitting regions containing various emitter materials.

Tandem white OLED

The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

Organic field-effect transistor

The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

Organic field-effect transistor and circuit

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Dresden, Germany

Ulrich Denker