Infineon Technologies Ag

Ulrich Backhausen

Thomas Kern

Michael Goessel

Thomas Rabenalt

Jens Rosenbusch

Thomas Nirschl

Mihail Jefremow

Giacomo Curatolo

Edvin Paparisto

Christian Badack

Stéphane Lacouture

Klaus Oberlaender

Ullrich Menczigar

Thomas Liebermann

Joerg Syassen

Xiangting Bi

A method is suggested for updating a memory comprising a first memory area and a second memory area, the method comprising the steps: (a) using a first image of data that is stored in the first memory area while writing a second image of data to the second memory area; (b) switching to using the second image of data that is stored in the second memory area; (c) writing an inverse image of the second image to the first memory area; and (d) using the first memory area and the second memory area as a differential memory. Also, a corresponding device is provided.

Using a differential memory storage architecture for updating a memory area

A memory system having a flexible read reference is disclosed. The system includes a memory partition, a failcount component, and a controller. The memory partition includes a plurality of memory cells. The failcount component is configured to generate failcounts in response to read operations of the memory partition. The controller is configured to calibrate a reference value for the memory partition by utilizing the failcounts.

Systems and methods utilizing a flexible read reference for a dynamic read window

A method for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The method includes determining, by a current determining circuit, a cell current and a cell current change rate of at least one of the cells; determining, by a control circuit, whether the cell current change rate is outside of a cell current change rate predefined range; performing, by the control circuit, a predetermined action if the control circuit determination is positive; and storing, in a memory, the determined cell current at predetermined times, and to store the determined cell current change rate.

Resistive memory transition monitoring

An apparatus for correcting at least one bit error within a coded bit sequence includes an error syndrome generator and a bit error corrector. The error syndrome generator determines the error syndrome of a coded bit sequence derived by a multiplication of a check matrix with a coded bit sequence.

Apparatus and method for correcting at least one bit error within a coded bit sequence

A method and a memory controller for accessing a non-volatile memory are disclosed. The method includes reading a first memory region of the non-volatile memory, ascertaining whether the first memory region contains a predetermined data pattern wherein the predetermined data pattern has no influence on resulting error correcting data determined for at least the first memory region. The method evaluating a data status for a second memory region of the non-volatile memory on the basis of a presence of the predetermined data pattern in the first memory region, wherein the data status indicates at least one of whether valid data is present within the second memory region and whether the second memory region is writable.

Marker programming in non-volatile memories

A circuit for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The circuit includes a current determining circuit configured to determine a cell current and a cell current change rate of at least one of the cells; and a control circuit configured to: determine whether the cell current change rate is outside of a cell current change rate predefined range; and perform a predetermined action if the control circuit determination is positive.

The disclosure relates to an electronic memory system, and more specifically, to a system to emulate an electrically erasable programmable read-only memory, and a method to emulate an electrically erasable programmable read-only memory. According to an embodiment of the disclosure, a system to emulate an electrically erasable programmable read-only memory is provided, the system including a first memory section and a second memory section, wherein the first memory section comprises a plurality of storage locations configured to store data partitioned into a plurality of data segments and wherein the second memory section is configured to store information mapping a physical address of a data segment stored in the first memory section to a logical address of the data segment.

System and method to emulate an electrically erasable programmable read-only memory

A memory circuit including a memory cell configured to provide a charge, voltage, or current to an associated bit-line; a sense amplifier configured to sense the charge, voltage, or current on the bit-line; a word-line circuit configured to control a word-line of the memory cell; and a tracking circuit configured to track one or more conditions of the memory circuit and provide a timing control signal at an output operative to adaptively control the word-line circuit.

Memory timing circuit

A circuitry comprising a syndrome generator configured to generate a syndrome based on a parity check matrix and a binary word comprising a first set of bits and a second set of bits is provided. For the first set of bits an error correction of correctable bit errors within the first set is provided by the parity check matrix and for the second set of bits an error detection of a detectable bit errors within the second set is provided by the parity check matrix.

Apparatus and method for error correction and error detection

The invention relates to an electronic memory system, and more specifically, to a system for emulating an electrically erasable programmable read only memory in a non-volatile memory device, and a method of emulating an electrically erasable programmable read only memory in a non-volatile memory device. According to an embodiment, a system for emulating an electrically erasable programmable read only memory is provided, the system including a Flash memory, wherein the Flash memory is configurable into a first region and a second region, wherein the first region is adapted to store a first class of data and the second region is adapted to store a second, different class of data.

System and method for emulating an EEPROM in a non-volatile memory device

A system and method for performing three scans for testing an address decoder and word line drive circuits is disclosed. The first scan determines whether only one word line is selected. The second scan determines whether the word line rise time to a target voltage level is within a specified time. Finally, the third scan determines whether the correct word line was selected.

Word line address scan

A circuitry is proposed for the correction of errors in a possibly erroneous binary word v'=v&#x2032;, . . . , v&#x2032;relative to a codeword v=v, . . . , v, in particular 3-bit errors containing an adjacent 2-bit error (burst error). The circuitry comprises a syndrome generator and a decoder. A modified BCH is used wherein n&#x2032; column vectors of a first BCH code submatrix are paired as column vector pairs so that a componentwise XOR combination of the two column vectors of each column vector pair produces an identical column vector K that is different from all column vectors of the first BCH submatrix. A second BCH submatrix comprises corresponding column vectors as the third power, according to Galois field arithmetic, of the column vector in the first BCH submatrix. The syndrome generated by the syndrome generator can be checked against the columns of the first and second submatrices.

Circuitry and method for correcting 3-bit errors containing adjacent 2-bit error

An apparatus for comparing pairs of binary words includes an intermediate value determiner and an error detector. The intermediate value determiner determines an intermediate binary word so that the intermediate binary word is equal to a reference binary word for a first pair of equal or inverted binary words, so that the intermediate binary word is equal to the inverted reference binary word for a second pair of equal or inverted binary words and so that the intermediate binary word is unequal to the reference binary word and the inverted reference binary word for a pair of unequal and uninverted binary words, if the intermediate value determiner works faultlessly. Further, the error detector provides an error signal based on the intermediate binary word so that the error signal indicates whether or not the binary words of a pair of binary words are equal or inverted.

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Taufkirchen, Germany

Ulrich Backhausen