Schott Glaswerke

Ulrich Ackermann

Volker Paquet

Ralf T Kersten

Heinz-Werner Etzkorn

Uwe Rutze

Hartmut Bauch

Uwe Ruetze

Heniz-W Etzkorn

A plasma or photo-induced chemical vapor deposition coating process and apparatus are provided for applying thin dielectric coatings on planar, curved, and large area substrates. A plasma is generated in a tubular outer conductor. This plasma or the UV radiation occurring in the plasma passes through an opening into a reaction chamber. The opening preferably extends axially along the outer conductor and communicates with the interior of the reaction chamber. At least one component of the reaction gas is introduced directly to the opening or into the reaction gas is introduced directly to the opening or into the reaction chamber adjacent to the opening, bypassing the outer conductor. In this apparatus, the reactive deposition of a coating onto a substrate occurs only in the reaction chamber and below the opening from the outer conductor.

CVD coating process for producing coatings and apparatus for carrying

For producing a fiberoptic waveguide preforms by plasma pulse-induced chemical vapor deposition (PICVD), blank glass tubes are prepared having a continuously increasing internal diameter in the direction of gas flow. This type of blank compensates for the otherwise occurring decrease in the density of the layer-forming molecules due to pressure drop, thereby permitting the formation of a uniform masswise deposition of layer-forming molecules along the length of the tube. This permits the production of collapsed preforms having a series of coating layers of substantially uniform thickness.

Internal coating of a glass tube by plasma pulse-induced chemical vapor

A plasma or photo-induced chemical vapor deposition coating process and apparatus are provided for applying thin dielectric coatings on planar, curved, and large area substrates. A plasma is generated in a tubular outer conductor. This plasma or the UV radiation occurring in the plasma passes through an opening into a reaction chamber. The opening preferably extends axially along the outer conductor and communicates with the interior of the reaction chamber. At least one component of the reaction gas is introduced directly to the opening or into the reaction chamber adjacent to the opening, bypassing the outer conductor. In this apparatus, the reactive deposition of a coating onto a substrate occurs only in the reaction chamber and below the opening from the outer conductor.

Plasma-enhanced CVD coating process

A plasma process and apparatus are provided for coating one or more planar substrates by a plasma-induced chemical vapor deposition in which plasma electrodes provide a plurality of overlapping plasma columns which extend over the entire surface of the substrate to be coated. A plurality of plasma electrodes are fixed in planes above, between, or below the substrates, and the individual plasma electrodes can be separately controlled. With a plasma pulse/CVD process, the spacing and angle between the substrates can be varied to alter the thickness of the coating. The process can be used for coating large area, planar vitreous bodies with multilayer optical coatings.

Plasma CVD process using a plurality of overlapping plasma columns

A process is provided for producing a planar glass substrate coated with a dielectric layer system in which the individual layers are formed by a chemical vapor deposition coating process. After the layers have been applied, the glass substrate is either drawn, compressed, or its surface enlarged until the coating layers are reduced in thickness. A planar glass substrate having a multiplicity of extremely thin dielectric layers can be fabricated according to this process.

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Mainz-Gonsenheim, Germany

Ulrich Ackermann