International Business Machines Corporation

Ullrich Richard Pfeiffer

Duixian Liu

Brian Paul Gaucher

David Goren

Thomas M Zwick

Brian Allan Floyd

Scott Kevin Reynolds

Janusz Grzyb

Shlomo Shlafman

Benny Sheinman

John Ulrich Knickerbocker

Christopher Vincent Jahnes

John Michael Cotte

John Harold Magerlein

Chirag Suryakant Patel

Cornelia Kang-I Tsang

Nils Deneke Hoivik

Alberto Valdes Garcia

Edward R Pillai

Zhi Ning Chen

Roi Carmon

Thomas Martin Zwick

Erik Breiland

Scott K Reynods

Apparatus and methods are provided for integrally packaging semiconductor IC (integrated circuit) chips with antennas having one or more radiating elements and tuning elements that are formed from package lead wires that are appropriated shaped and arranged to form antenna structures for millimeter wave applications.

Apparatus and methods for packaging integrated circuit chips with antennas formed from package lead wires

Methods are provided for building integrated circuit transformer devices having compact and optimized architectures for use in MMW (millimeter-wave) applications. The integrated circuit transformer devices have universal and scalable architectures that can be used as templates or building blocks for constructing various types of on-chip devices for millimeter-wave applications.

Integrated circuit transformer devices for on-chip millimeter-wave applications

Apparatus and methods are provided for integrally packaging antennas with semiconductor IC (integrated circuit) chips to provide highly-integrated and high-performance radio/wireless communications systems for millimeter wave applications including, e.g., voice communication, data communication, and radar applications. For example, wireless communication modules are constructed with IC chips having receiver/transmitter/transceiver integrated circuits and planar antennas that are integrally constructed from BEOL (back end of line) metallization structures of the IC chip.

Apparatus and methods for packaging antennas with integrated circuit chips for millimeter wave applications

A chip-based prober for measuring a device-under-test is provided. The prober includes a probe tip, a voltage and control connector, a chip carrier, and a programmable termination chip. The probe tip is configured to contact the device-under-test. The voltage and control connector is in electrical communication with the probe tip. The programmable termination chip has a plurality of terminations interconnected with the voltage and control connector and the chip carrier through controlled collapsed chip connections.

Chip-based prober for high frequency measurements and methods of measuring

An apparatus is described incorporating an interposer having a cavity for a portion of an antenna structure, having conductor through vias, a top Si part having interconnection wiring and having pads for electrically mounting an integrated circuit chip thereon, wherein the top Si part mates with the interposer electrically and mechanically. The interposer and top Si part may be scaled to provide an array of functional units. The invention overcomes the problem of combining a high efficient antenna with integrated circuit chips in a Si package with signal frequencies from 1 to 100 GHz and the problem of shielding components proximate to the antenna and reduces strain arising from mismatching of TCEs.

Versatile Si-based packaging with integrated passive components for mmWave applications

Power detector integrally formed within a printed transmission line to capacitively couple a portion of signal power propagating on the printed transmission line and a power detector circuit that receives coupled power output from the power detector to detect a power level of the signal power. The power detector is designed such that capacitance of the coupling capacitor is absorbed into a distributed capacitance of the transmission line to maintain continuity of a characteristic impedance of the transmission line.

Circuits and methods for high-efficiency on-chip power detection

Circuits and methods are provided for building integrated transformer-coupled amplifiers with on-chip transformers that are designed to resonate or otherwise tune parasitic capacitances to achieve frequency tuning of amplifiers at millimeter wave operating frequencies.

Circuits and methods for implementing transformer-coupled amplifiers at millimeter wave frequencies

Shielded circuit pad is provided where the parasitic capacitance is tuned out by the inclusion of a shunt transmission line stub which reduces the substrate induced loss in millimeter-wave applications. The circuit pad is located on the substrate, with a shield located beneath the circuit pad, and the shunt transmission line stub attached to the circuit pad. Accordingly, controlled impedance is obtained for millimeter-wave applications. The spacing between the circuit pad and the shield may then be minimized.

On-chip circuit pad structure

Apparatus and methods are provided for integrally packaging antenna devices with semiconductor IC (integrated circuit) chips, wherein IC chips are packaged with dielectric resonators antennas that are integrally constructed as part of a package molding (encapsulation) process, for example, to form compact integrated radio/wireless communications systems for millimeter wave applications.

Apparatus and methods for packaging dielectric resonator antennas with integrated circuit chips

Apparatus and methods are provided for constructing waveguide-to-transmission line transitions that provide broadband, high performance coupling of power at microwave and millimeter wave frequencies. More specifically, exemplary embodiments of the invention include wideband, low-loss and compact coplanar waveguide-to-rectangular waveguide transition structures and asymmetric coplanar stripline (or coplanar stripline)-to-rectangular waveguide transition structures that are particularly suitable for microwave and millimeter wave applications.

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Yorktown Heights, NY, United States of America

Ullrich Richard Pfeiffer