Stmicroelectronics S.a.

Johann Wolfgang Goethe-universitat Frankfurt A.m.

Johann Wolfgang Goeth-Universität Frankfurt A.m.

Johann Wolfgang Goethe-universitat Frankfurt Am Main

Bergische Universität Wuppertal

Ullrich Pfeiffer

Andreia Cathelin

Hani Sherry

Janusz Grzyb

Andreas Kaiser

Yan Zhao

Hartmut Roskos

Peter Haring Bolivar

Alvydas Lisauskas

Richard Al Hadi

Erik Oejefors

Erik Öjefors

Hartmut G Roskos

A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.

Terahertz imager

A frequency oscillator includes a ring oscillator having N inverters coupled in series, where N is an odd integer equal to three or more. A first filter is coupled between an output node of a first of the inverters and an output line of the frequency oscillator. A second filter is coupled between an output node of a second of the inverters and the output line of the frequency oscillator.

High frequency oscillator

A pixel circuit may include a detection circuit having first and second transistors coupled in series between differential output nodes of an antenna. The antenna may be configured to be sensitive to terahertz radiation. The pixel circuit may also include a capacitor coupled to an intermediate node between the first and second transistors, and control circuitry coupled to control nodes of the first and second transistors. The control circuitry may be configured for selectively applying to the control nodes a gate biasing voltage for biasing the control nodes of the first and second transistors during a detection phase of the pixel circuit, and/or a reset voltage for resetting a voltage stored by the capacitor.

Terahertz imager with global reset

The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal V. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor Cinto the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vwhich corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Iwhich is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.

Distributive resistive mixer

The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.

Monolithically integrated antenna and receiver circuit for the detection of terahertz waves

Growing community of inventors

Wuppertal, Germany

Ullrich Pfeiffer