Hyundai Motor Company

Kia Motors Corporation

Hynix Semiconductor Inc.

Uk Han Kim

Kum Lim Choi

Sang-Oh Lee

Keunseok Lee

Keun Seok Lee

Woo Seok Choi

Kyung-Bo Ko

Sang Suk Lee

Chi Won Shon

Chiwon Shon

A decoupler is provided that includes a pulley around which a belt is wound. A sprag limiter is fixed to an interior circumference of the pulley and has protrusions formed at predetermined intervals in a circumferential direction on an interior circumference thereof. A sprag hub is disposed in the sprag limiter and has first apertures formed at predetermined intervals from an interior circumference to an exterior circumference thereof. A shaft hub is disposed in the sprag hub and has second apertures that are formed to correspond to the first apertures from an interior circumference to an exterior circumference thereof. Sprags having lower end portions are each inserted into the second apertures, central portions are each inserted into the first apertures, and upper end portions are in contact with the interior circumference of the sprag limiter, and allow the shaft hub to rotate in one direction based on the pulley movement.

Decoupler as one-way clutch

A starter-generator system may include a starter-generator configured to provide an engine-cranking torque or receive a generator-cranking torque, a belt drive mechanism located between the starter-generator and an engine, and a torque transmission mechanism that selectively transmits the engine-cranking torque or the generator-cranking torque between the starter-generator and the belt drive mechanism.

Starter-generator system

A method for fabricating a semiconductor device includes etching a substrate to form a plurality of bodies isolated by a first trench, forming a buried bit line gap-filling a portion of the first trench, etching the top portions of the bodies to form a plurality of pillars isolated by a plurality of second trenches extending across the first trench, forming a passivation layer gap-filling a portion of the second trenches, forming an isolation layer that divides each of the second trenches into isolation trenches over the passivation layer, and filling a portion of the isolation trenches to form a buried word line extending in a direction crossing over the buried bit line.

Method for fabricating semiconductor device with buried word line

A method for fabricating a semiconductor device includes etching a semiconductor substrate using a hard mask layer as a barrier to form a trench defining a plurality of active regions, forming a gap-fill layer to gap-fill a portion of the inside of the trench so that the hard mask layer becomes a protrusion, forming spacers covering both sides of the protrusion, removing one of the spacers using a doped etch barrier as an etch barrier, and etching the gap-fill layer using a remaining spacer as an etch barrier to form a side trench exposing one side of the active region.

Method for fabricating semiconductor device

Growing community of inventors

Gyeonggi-do, South Korea

Uk Han Kim