Samsung Electronics Co., Ltd.

Uihyoung Lee

Donghyun Lee

Suncheul Kim

Sanghyun Lee

Jinhyoung Kim

Jongseok Lee

Chajea Jo

Jeong-Woo Park

Jinho Choi

Taesung Lee

Donghoon Han

Hongsik Park

Jae-hyun Phee

Suji Gim

Jaihyung Won

Honyun Park

Taeheon Lee

Sewan Kim

Ha-Young Yim

An apparatus for trapping an exhaust material from a substrate-processing process includes: a cyclone configured to provide the exhaust material with a swirling flow, wherein the exhaust material is discharged from the substrate-processing process using a reaction gas; an atomization module for providing the cyclone with a mist to convert the exhaust material into a powder through a wet oxidation reaction; and a collector configured to collect the powder.

Apparatus trapping an exhaust material from a substrate-processing process and apparatus for processing a substrate including the trapping apparatus

Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

Flow control method using plasma system

A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCland Honto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.

Method of forming contact included in semiconductor device

A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

Methods of fabricating semiconductor devices

Provided are an apparatus for and a method of processing a substrate. The substrate processing apparatus includes a substrate processing unit to process a substrate using a processing solution containing a mixture of first and second sources; a source supplying part to supply the first and second sources to the substrate processing unit; at least one analyzer to measure a concentration of the second source in the processing solution or a pH value of the processing solution and adjust a measurement reference value of the second source in the processing solution using a standard solution, in which the first and second sources are mixed to have a predetermined concentration or pH value; and a standard solution supplying part to prepare the standard solution using the first and second sources to be supplied from the source supplying part and to supply the standard solution to the at least one analyzer.

Apparatus for and method of processing substrate

A semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package include a substrate including a plurality of pads and a plurality of bumps evenly disposed on an entire region of the substrate regardless of an arrangement of the plurality of pads. According to the present invention, a simplification of a process can be accomplished, a cost of a process can be reduced, reliability can be improved and an under-filling can become easy.

Semiconductor package and methods of manufacturing the same

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Hwaseong-si, South Korea

Uihyoung Lee