Hyundai Motor Company

Kia Corporation

Ui-Yeon Won

Sang-Hyeok Yang

Jong-seok Lee

A method for manufacturing a two-terminal memory device includes: forming an extended drain and a drain layer on a substrate; forming a ferroelectric layer covering the substrate and the extended drain; forming a semiconducting layer on the ferroelectric layer, and forming a source layer connected to the semiconducting layer on the ferroelectric layer.

Method for manufacturing a two-terminal memory device

A two-terminal memory device includes: a substrate; an extended drain extending from a drain and a lower surface of the drain and laminated on the substrate; a ferroelectric layer connected to the drain and covering the extended drain and the substrate; and a source laminated on the ferroelectric layer to face the drain.

Two-terminal memory device

A two-terminal memory device including: a substrate; a source and a drain formed to face each other on an upper surface of the substrate; a ferroelectric layer connected to the source and the drain and formed between the source and the drain; and an extended drain extending from the drain and laminated on the ferroelectric layer. The two-terminal memory device may be applied as a cross-point type and neuromorphic device capable of implementing multi-resistance levels with multi-layer switchable resistance layers.

Growing community of inventors

Ansan-si, South Korea

Ui-Yeon Won