Applied Materials, Inc.

Bühler Alzenau Gmbh

Udo Schreiber

Gerd Kleideiter

Matthias List

Jutta Trube

Sven Schramm

Evelyn Scheer

Roland Weber

Ingo Wegener

Oliver Graw

An inline coating system has an introduction chamber comprising an introduction gate, a first buffer chamber which connects to the introduction chamber and which can be separated from the introduction chamber by means of a first sluice gate and other components. The first buffer chamber has a gap sluice device with at least one slit diaphragm, and when the first insertion gate is opened or closed, a pressure gradient within the first buffer chamber is adjusted between the pressure in the region of the second insertion gate and the pressure in the region of the first insertion gate.

Method for operating an inline coating system and inline coating system

The invention relates to a silver low-E coating for glass which is temperable and can be applied by means of sputter processes onto the glass. The individual layers of the coating are cost-effective standard materials. One embodiment of the invention for example is comprised of a glass substrate, an SiNlayer disposed thereon of a thickness of approximately 15 nm, a TiOlayer of 15 nm thickness on the SiNlayer, a 12.5 nm thick Ag layer on the TiOlayer, a NiCrOlayer of approximately 5 nm thickness on the Ag layer and a terminating 45 nm thick SiNlayer.

Temperable glass coating

A method for forming a thin-film transistor gate insulating layer over a substrate disposed in a processing chamber is provided. The method includes: introducing a processing gas for producing a plasma in the processing chamber; heating the substrate to a substrate processing temperature of between 50 and 350&#xb0; C.; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate by sputtering a target assembly at a medium frequency.

Method and system for depositing a thin-film transistor

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Jossgrund, Germany

Udo Schreiber