Infineon Technologies Ag

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Dr. Hielscher Gmbh

Iwe- Ingenieurgesellschaft Für Wasser Und Entsorgung Mbh

Udo Gerlach

Hans Taddiken

Reinhard Losehand

Nikolay Ilkov

Harald Hielscher

Johann Peter Forstner

Andreas Weisgerber

Hannelore Friedrich

Karin Jobst

Annegret Potthoff

Eberhard Friedrich

One embodiment of the present invention relates to a transmitter within a single integrated chip substrate, which is capable of continuous beam steering of a transmitted radar beam as well as an option to change the physical position of the origin of the transmit radar beam. The transmitter has a signal generator that generates an RF signal. The RF signal is provided to a plurality of independent transmission chains, which contain independently operated vector modulators configured to introduce an individual phase adjustment to the high frequency input signal to generate separate RF output signals. A control unit is configured to selectively activate a subset of (e.g., two or more) the independent transmission chains. By activating the subset of independent transmission chains to generate RF output signals with separate phases, a beam steering functionality is enabled. Furthermore, the subset defines a changeable position of the transmitted radar beam.

Automotive radar transmitter architecture

A circuit includes first, second, third and fourth terminals, and first and second switches. The first switch switches a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal. The second switch switches a second signal from the third terminal to the second terminal or from the third terminal to the fourth terminal. The first switch comprises a first switching element with a first high-frequency switching transistor connected between the first terminal and the second terminal, and a second switching element with a second high-frequency switching transistor connected between the first terminal and the fourth terminal. The second switch comprises a third switching element with a third high-frequency transistor connected between the third terminal and the second terminal and comprises a fourth switching element with a fourth high-frequency switching transistor connected between the third terminal and the fourth terminal.

High-frequency switching transistor and high-frequency circuit

One embodiment of the present invention relates to a radar transmitter comprised within a single integrated chip substrate, which is capable of continuous beam steering of a transmitted radar beam as well as an option to change the physical position of the origin of the transmit radar beam. The radar transmitter has a signal generator that generates an RF signal. The RF signal is provided to a plurality of independent transmission chains, which contain independently operated vector modulators configured to introduce an individual phase adjustment to the high frequency input signal to generate separate RF output signals. A control unit is configured to selectively activate a subset of (e.g., two or more) the independent transmission chains. By activating the subset of independent transmission chains to generate RF output signals with separate phases, a beam steering functionality is enabled. Furthermore, the subset defines a changeable position of the transmitted radar beam.

A switching transistor includes a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, having a first conductivity type and having a barrier region dopant concentration that is higher than the substrate dopant concentration. A source region is embedded in the barrier region, and has a second conductivity type and has a dopant concentration that is higher than the barrier region dopant concentration. A drain region is embedded in the barrier region and is offset from the source region. The draining region has the second conductivity type and a dopant concentration that is higher than the barrier region dopant concentration. A channel region extends between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region. An insulation region covers the channel region and is disposed between the channel region and a gate electrode. The barrier region dopant concentration and the substrate dopant concentration are chosen for generating a space-charge region around the source region and the drain region and for depleting the barrier region.

A reference current circuit has an input configured to receive an input current, a first transistor, a second transistor, and an output configured to provide a reference current. The input is directly connected to a control input of the second transistor and a first terminal of the first transistor, and is connected via a first resistor to a control input of the first transistor. The output is connected to a first terminal of the second transistor. A reference node is connected via a second resistor to the control input of the first transistor, directly to a second terminal of the first transistor and via a third resistor to a second terminal of the second transistor.

Reference current circuit and low power bias circuit using the same

A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequency switching transistors.

Microwave circuit arrangement containing one or more semiconductor switching elements, which are characterized in that at least one semiconductor switching element is controlled or switched by alteration of the drain and source potentials, and for use of these circuits in mobile telephones or mobile radio transceivers.

Growing community of inventors

Munich, Germany

Udo Gerlach