Atmel Corporation

Uday Mudumba

Erwin Castillon

Stephen Trinh

Danut Manea

Dixie Nguyen

Sabina Centazzo

Systems and techniques for performing write operations on non-volatile memory are described. A described system includes a memory structure including non-volatile memory cells that are arranged on word lines and bit lines and a microcontroller that is communicatively coupled with the memory structure. The memory structure can include non-volatile memory cells that are arranged on word lines and bit lines. The microcontroller can be configured to receive data to write to the memory structure, write the data to the memory structure using a selected word line of the word lines, detect a failure to write the data, apply, based on the failure, a negative bias voltage to one or more unselected word lines of the word lines during a negative bias period, and write the data to the portion of the memory cells using the selected word line during the negative bias period.

Adaptive programming for non-volatile memory devices

A sense amplifier includes a sense input node, a current mirror circuit to mirror the current on the sense input node, and a result output node. A current source supplies an offset current. The sense amplifier increases the current on the sense input node by the offset current and reduces the offset current from the mirrored current at the result output node.

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San Jose, CA, United States of America

Uday Mudumba