Shenzhen China Star Optoelectronics Technology Co., Ltd.

Tzuchieh Lai

Xiaojiang Yu

Changyeh Lee

Wenying Li

Chenglung Chiang

Polin Chen

Zhe Hu

Yuting Chen

Runze Zhan

Chengyuan Dong

The present invention relates to a GOA circuit for tablet display and a display device. The GOA circuit comprises cascaded plurality of GOA units, the GOA unit comprises a pull-up control partand a transfer part; the transfer partcomprises a first thin film transistor T, the gate thereof is connected with the gate signal point Q(n), the drain and the source are respectively input the clock signal CK(n) and output the turn-on signal ST(n); the pull-up control part comprises: a second thin film transistor T, the gate thereof is input the turn-on signal ST(n&#x2212;2), the drain and the source are respectively connected with the horizontal scan line G(n&#x2212;2) and the gate signal point Q(n); a third tin film transistor T, the gate thereof is connected with the horizontal scan line G(n&#x2212;1), the drain and the source are respectively connected with the horizontal scan line G(n&#x2212;1) and the gate signal point Q(n). The present invention also provides a related display device. The present invention can improve the stability of the GOA circuit and the related display device in high temperature.

GOA circuit for tablet display and display device

The present invention provides a method for manufacturing a thin-film transistor substrate, which has a simple process and achieves an excellent contact interface between an oxide semiconductor layer and source/drain terminals through successive film forming so as to prevent crowding effect resulting from excessive contact resistance. Further, by using a metallic material containing tantalum to make the source/drain terminals and applying an etchant solution containing hydrogen peroxide to carry out etching in an etching process of the source/drain terminals, damages of the oxide semiconductor layer caused by traditional etchant solution can be prevented and quality of the thin-film transistor substrate can be enhanced. Further, it is not necessary to additionally form an etch stopper layer to protect the oxide semiconductor layer in the back channel so as to achieve relatively high channel width/length ratio (W/L), and also simplify the structure of the thin-film transistor substrate, simplify the manufacturing process, reduce the manufacturing cost, and enhance yield rate.

Method for manufacturing thin-film transistor substrate

The present invention relates to a GOA circuit for liquid crystal displaying and a display device. The GOA circuit includes a plurality of cascaded GOA units and the nth-stage GOA unit includes a pull-up part (), a key pull-down part (), a pull-down holding part (), a pull-up control part (), and a boost capacitor (Cb). In operation, a nth-stage clock signal (CK(n)) and first and second clock signals (LCand LC) are inputted. The frequencies of the first clock signal (LC) and the second clock signal (LC) are lower than the nth clock signal (CK(n)). The first clock signal (LC) charging a first circuit point (P) and the second clock signal (LC) charging a second circuit point (K) are alternately carried out. The present invention also provides a corresponding display device. The GOA circuit of the present invention precisely controls the voltage of the gate Q(n) that affects charging of a horizontal scan line by means of the low frequency clock signal and the high frequency clock signal, so as to ensure a stable output of the GOA charging signal.

GOA circuit for liquid crystal displaying and display device

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Guangdong, China

Tzuchieh Lai