Varian Semiconductor Equipment Associates, Inc.

Tzu-Yu Liu

Rajesh Prasad

Kyu-Ha Shim

Nobuyuki Sasaki

Eric J Bergman

Kwangduk Douglas Lee

Adolph Miller Allen

John Lee Klocke

Zhong Qiang Hua

Terrance Y Lee

Harry S Whitesell

Edwin A Arevalo

Deven Raj Mittal

Tom Ho Wing Yu

Kyuha Shim

Somchintana Norasetthekul

Ning Zhan

Ryuichi Muira

Hiro Ito

James Cournoyer

Viabhav Soni

Ravi Rajagopalan

Lauren Liaw

Takaski Shimizu

A method may include depositing a carbon layer on a substrate using physical vapor deposition, wherein the carbon layer exhibits compressive stress, and is characterized by a first stress value; and directing a dose of low-mass species into the carbon layer, wherein, after the directing, the carbon layer exhibits a second stress value, less compressive than the first stress value.

Techniques for forming low stress etch-resistant mask using implantation

A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.

Techniques for forming low stress mask using implantation

A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350&#xb0; C.

Techniques for improved removal of sacrificial mask

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Somerville, MA, United States of America

Tzu-Yu Liu