Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Semiconductor Manufacturing (shanghai) International Corporation

Semiconductor Manufacturing (beijing) International Corporation

Tzu Yin Chiu

Xuanjie Liu

Chong Wang

Haifang Zhang

Jesse Huang

Simon Tarng

Clifford Ian Drowley

Yu Jiang

Leong Tee Koh

Da Qiang Yu

The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The image sensor includes: a semiconductor substrate; a first active region located on the semiconductor substrate; a doped semiconductor layer located on the first active region; and a contact located on the semiconductor layer, where the first active region includes: a first doped region and a second doped region abutting against the first doped region, wherein the second doped region is located at an upper surface of the first active region, and wherein the second doped region is formed by dopants in the semiconductor layer that are annealed to be diffused to a surface layer of the first doped region. The present disclosure may reduce leakage current and improve device performances.

Image sensor and manufacturing method therefor

The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The method includes: providing a semiconductor structure, where the semiconductor structure includes: a semiconductor substrate, and a first active region located on the semiconductor substrate, the first active region including a first doped region and a second doped region abutting against the first doped region, and the second doped region being located at an upper surface of the first active region; forming a semiconductor layer on an upper surface of the second doped region; and forming a contact connected to the semiconductor layer. The present disclosure enables defects or damages caused when forming the contact to be kept away from a junction field formed by the second doped region and the first doped region. Therefore, leakage current may be reduced and device performances may be improved.

Image sensor including doped regions and manufacturing method therefor

A method is provided for fabricating a buried-channel MOSFET and a surface-channel MOSFET of the same type and different gate electrodes on a same wafer. The method includes providing a semiconductor substrate having a well area and a plurality of shallow trench isolation structures; forming a threshold implantation region doped with impurity ions opposite of that of the well area in the well area for the buried-channel MOSFET; forming a gate structure including a gate dielectric layer and a gate electrode on the semiconductor substrate, wherein the gate electrode of the buried-channel MOSFET is doped with impurity ions with a same type as that of the well area, and the gate electrode of the surface-channel MOSFET is doped with impurity ions with a type opposite of that of the well area; and forming source and drain regions in the semiconductor substrate at both sides of the gate structure.

Buried-channel MOSFET and a surface-channel MOSFET of a same type and fabrication method thereof

A method for fabricating a semiconductor integrated circuit and resulting structure. The method includes providing a semiconductor substrate with an overlying dielectric layer and forming a polysilicon gate layer and an overlying capping layer. The gate layer is overlying the dielectric layer. The method also includes patterning the polysilicon gate layer to form a gate structure and a local interconnect structure. The gate structure and the local interconnect structure include a contact region defined therebetween. The gate structure also includes the overlying capping layer. The method includes forming sidewall spacers on the gate structure and the local interconnect structure and removing the sidewall spacer on the local interconnect structure. The method also includes forming contact polysilicon on the contact region and implanting a dopant impurity into the contact polysilicon. The method diffuses the dopant impurity from the contact polysilicon into the contact region in the substrate to form a diffused junction region. The method selectively removes the capping layer overlying the gate structure. The method then forms a silicide layer overlying the gate structure and surface of the contact polysilicon, whereupon the sidewall spacers isolate the silicide layer on the gate structure from the silicide layer on the contact polysilicon.

Self aligned MOS structure with polysilicon contact

An apparatus for patterning objects for the manufacture of semiconductor integrated circuits includes an optical source, multiple fiber cores coupled to the optical source, each of the fiber cores has an input end and an output end, and each of the input ends is coupled to the optical source. The apparatus further includes an array coupled to each of the fiber cores, the array is configured to allow each of the fiber ends to output toward a common plane, an object having a photosensitive material coupled to the common plane, and a pattern that is exposed onto the photosensitive material. The pattern is composed of a number beams corresponding to a number of fiber cores.

Mask-less method and structure for patterning photosensitive material using optical fibers

A method for patterning objects, e.g., semiconductor wafer, glass plate, composite, etc. The method includes providing an object, which has an overlying layer of photosensitive material. The method includes selectively applying light through one or more fiber cores from a plurality of fiber cores. Each of the fiber cores has an input end and an output end. Each of the input ends is coupled to the optical source. The plurality of fiber cores is numbered from 1 through N, where N is an integer greater than 1. Each of the output ends is also numbered from 1 through N, which corresponds respectively to each of the plurality of fiber cores numbered from 1 through N. The method exposes the photosensitive material from light emitted selectively through the one or more fiber cores. The one or more fiber cores out(s) light respectively through one or more output ends of the fiber cores. Each of the output ends numbered from 1 through N is associated with a pixel numbered respectively from 1 through N.

A method for illuminating an object for selectively patterning a photosensitive material overlying the object using an array of mirror devices. The method includes applying electromagnetic radiation using a flood beam onto an array of mirror devices. Each of the mirror devices is associated with a pixel for a pattern to be exposed onto the photosensitive material. The method also includes selectively actuating one or more mirrors on the array to deflect corresponding portions of the beam onto corresponding portions of the photosensitive material to expose the portions of the photosensitive material on the object. The method maintains one or more other mirrors in a selected position(s) to maintain corresponding other portions of the photosensitive material free from exposure. Preferably, the combination of exposed and unexposed portions forms the pattern exposed onto the photosensitive material.

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Shanghai, China

Tzu Yin Chiu