Playnitride Display Co., Ltd.

Tzu-Yang Lin

Yi-Chun Shih

Yu-Hung Lai

Pei-Hsin Chen

Ying-Tsang Liu

Yi-Ching Chen

Yun-Li Li

Yu-Chu Li

Fei-Hong Chen

Yen-Chun Tseng

Chih-Ling Wu

Pai-Yang Tsai

Yu-Yun Lo

Bo-Wei Wu

Yi-Min Su

Jyun-De Wu

Huan-Pu Chang

Yun-Syuan Chou

Sheng-Yuan Sun

Chang-Feng Tsai

Chee-Yun Low

You-Lin Peng

Wan-Jung Peng

Chien-Chen Kuo

Yen-Yeh Chen

Gwo-Jiun Sheu

Sheng-Chieh Liang

Ying-Ting Lin

Jian-Zhi Chen

Mi-Hung Lai

Hung-Hsuan Wang

A micro element structure including a body, two electrodes, two solder patterns and a confinement structure is provided. The two electrodes are disposed on a side of the body. The two solder patterns are disposed on the two electrodes, respectively. The confinement structure protrudes relative to the body, wherein the confinement structure surrounds one of the electrodes and the solder pattern thereon, and at least a portion of the confinement structure is separated from the surrounded solder pattern with a gap. A display device is also provided.

Micro element structure and display device

A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

Micro light emitting diode structure

A light-emitting element including an epitaxial structure and a light guide structure is provided. The epitaxial structure has a first surface and a second surface opposite to each other and includes an active layer. The light guide structure is disposed on the first surface of the epitaxial structure and includes a first light reflection layer and a filter layer covering on an upper surface of the first light reflection layer. The first light reflection layer completely covers the first surface. A display panel is also provided.

Light-emitting element and display panel including a light guide structure to improve optical quality

A micro light emitting diode structure including an epitaxial structure, an electrode layer, a barrier layer and a bonding layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. The bonding layer is disposed on the barrier layer and away from the electrode layer.

Micro light emitting diode structure and micro light emitting diode display device

A micro LED display device includes a display substrate. The display substrate has a first transfer area and a second transfer area adjacent to each other. Both the first transfer area and the second transfer area include a plurality of pixel areas. The pixel area of the first transfer area includes a first micro light-emitting element arranged in a straight line along a first direction. The pixel area of the second transfer area includes a second micro light-emitting element arranged in another straight line along the first direction. In the first direction, the first micro light-emitting element and the second micro light-emitting element are arranged in a staggered manner. A manufacturing method of a micro LED display device is also provided.

Micro LED display device

A micro light emitting diode structure including an epitaxial structure, an electrode layer and a barrier layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An orthogonal projection area of the barrier layer on the epitaxial structure is greater than and covers an orthogonal projection area of the electrode layer on the epitaxial structure.

A micro light emitting diode panel is provided. The micro light emitting diode panel includes a circuit substrate, a plurality of transistor devices and a plurality of micro light emitting diode devices. The transistor devices are bonded to the circuit substrate. Each of the transistor devices has a semiconductor pattern, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor pattern. The source electrode, the drain electrode, and the gate electrode are located between the semiconductor pattern and the circuit substrate. The electron mobility of the semiconductor pattern is greater than 20 cm/V·s. The micro light emitting diode devices are bonded to the circuit substrate, and are electrically connected to the transistor devices respectively.

Micro light emitting diode panel

A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Manufacturing method of electronic element module

Mass transfer equipment including a base stage, a first substrate stage, a second substrate stage, at least one laser head and a servo motor module is provided. The first substrate stage is adapted to drive a target substrate to move along a first direction. The second substrate stage is adapted to drive at least one micro device substrate to move along a second direction. The at least one laser head is adapted to move to a target position of the second substrate stage and emits a laser beam toward the at least one micro device substrate. At least one micro device is separated from a substrate of the at least one micro device substrate and connected with the target substrate after the irradiation of the laser beam. The servo motor module is used for driving the first substrate stage, the second substrate stage and the at least one laser head to move.

Mass transfer equipment

A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

Micro light emitting diode and display panel having etch protection conductive layer

A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Micro light-emitting diode

A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.

Semiconductor structure, display panel and manufacturing method of electronic element module

Micro LED display device and manufacturing method thereof

A micro light-emitting device, including a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, and a light reflection layer, is provided. The light-emitting layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the light-emitting layer. The first type electrode and the second type electrode are both arranged on the second type semiconductor layer. The light reflection layer is arranged between the light-emitting layer and the first type electrode. The light reflection layer includes an oxidized area and a non-oxidized area. A reflectance of the oxidized area is greater than a reflectance of the non-oxidized area. An orthographic projection of a part of the oxidized area on the first type semiconductor layer and an orthographic projection of the first type electrode on the first type semiconductor layer at least partially overlap.

Micro light-emitting device

A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.

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Miaoli County, Taiwan

Tzu-Yang Lin