Taiwan Semiconductor Manufacturing Comp. Ltd.

Tzu-Yang Chung

Shao-Yen Ku

Shang-Yuan Yu

Sheng-Liang Pan

Ming-Te Chen

Szu-Yao Wang

Chien-Wen Hsiao

Chi-Fu Yu

Shan-Ching Lin

Chie-Chi Chen

Hsiao Chien-Wen

Chia-Ming Tai

Tai-Liang Lyu

Chao-Hui Kuo

Wagner Chang

Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (HSO) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (HSO) from the SPM effluent and to provide the recovered HSOto the SPM cleaning unit via a feedback conduit.

Single wafer cleaning tool with HSOrecycling

One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example.

Wafer cleaning

Embodiments of mechanisms for cleaning a wafer are provided. A method for cleaning a wafer includes cleaning a wafer by using a wafer scrubber and cleaning the wafer scrubber in a scrubber cleaning module. An agitated cleaning liquid is applied on the wafer scrubber to clean the wafer scrubber. The method also includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning liquid.

Mechanisms for cleaning wafer and scrubber

A rinse tank for rinsing electronic substrates after a chemical process and a method for utilizing such rinse tank are provided. In the rinse tank, devices for performing a quick dump rinse; for performing a cascade overflow rinse and for feeding an inert gas bubbling are provided in the cavity of a single rinse tank. By utilizing the present invention novel rinse tank, the processing problems frequently observed in conventional rinse tanks where two rinse tanks are required for the quick dump rinse and for the cascade overflow rinse, such as particle re-deposition and a large floor space area requirement are eliminated. Furthermore, the wafer rinse process after a metal etching process can be accomplished in a total process time that is at least 2&tilde;3 minutes shorter than that required by using conventional rinse tanks.

Wafer rinse tank for metal etching and method for using

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Hsin-Chu, Taiwan

Tzu-Yang Chung