Taiwan Semiconductor Manufacturing Comp. Ltd.

Tzu-Wei Kao

Chia-Hao Hsu

Tzung-Chi Fu

Chia-Chen Chen

Yu Chao Lin

Chao-Cheng Chen

Wei-Yang Lee

Ryan Chia-Jen Chen

Chia-Pin Lin

Wei-Yuan Lu

Eric Chih-Fang Liu

Szu-Wei Tseng

Methods and semiconductor structures are provided. A method according to the present disclosure includes receiving a workpiece that includes a first gate structure disposed over a first active region, a second gate structure disposed over a second active region, a first gate spacer extending along a sidewall of the first gate structure and disposed at least partially over a top surface of the first active region, a second gate spacer extending along a sidewall of the second gate structure and disposed at least partially over a top surface of the second active region, and a source/drain feature. The method also includes treating a portion of the first gate spacer and a portion of the second gate spacer with a remote radical of hydrogen or oxygen, removing the treated portions, and after the removal, depositing a metal fill material over the source/drain feature.

Low resistance contact feature

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.

Semiconductor structure for extreme ultraviolet electrostatic chuck with reduced clamping effect

A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epitaxy is performed to grow a semiconductor material in the recess.

FinFETs with regrown source/drain and methods for forming the same

Method for extreme ultraviolet electrostatic chuck with reduced clamp effect

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Hsinchu, Taiwan

Tzu-Wei Kao