Shenzhen Epostar Electronics Limited Co.

Tzu-Wei Fang

Yu-Hua Hsiao

Hung-Chih Hsieh

Heng-Lin Yen

A data writing method is provided. The method includes receiving a first write command and first data corresponding to the first write command from a host system, wherein the first write command instructs to store the first data into a first logical address; copying the first data into a register, responding to the host system that the first write command is completed, and starting to execute a first program operation to program the first data into a first physical page; and in response to determining that the first program operation is failed, reading the first data from the register according to a logical to physical addresses mapping table and mandatorily programming the first data into a second physical page.

Data writing method and storage controller

A Memory management method for a storage device having a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of physical blocks divided into a plurality of block stripes. The method includes: scanning the physical blocks to identify one or more bad physical blocks among the physical blocks; calculating a plurality of effective weight values corresponding to the block stripes according to a plurality of data accessing time parameters of the rewritable non-volatile memory module, a plurality of valid data counts, and the identified one or more bad physical blocks; and selecting a target block stripe from the block stripes according to the effective weight values to perform a garbage collection operation.

Memory management method and storage controller

A decoding method and a storage controller for a rewritable non-volatile memory module are provided. The method includes choosing a target word line among a plurality of word lines, wherein a plurality of target memory cells of the target word-line are programmed; reading the target memory cells by respectively using different X read voltage sets, so as to obtain X Gray code count deviation summations, wherein the X read voltage sets and the corresponding X Gray code count deviation summations are all ordered based on a first predefined order; and choosing one of the X read voltage sets as an optimized read voltage set according to the X Gray code count deviation summations.

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Taipei, Taiwan

Tzu-Wei Fang