Intel Corporation

Tzu-Min Ou

Rishabh Mehandru

Stephen M Cea

Aaron D Lilak

Cory E Weber

Patrick H Keys

Leonard C Pipes

Seahee Hwangbo

Jack Yaung

Fin doping, and integrated circuit structures resulting therefrom, are described. In an example, an integrated circuit structure includes a semiconductor fin. A lower portion of the semiconductor fin includes a region having both N-type dopants and P-type dopants with a net excess of the P-type dopants of at least 2E18 atoms/cm. A gate stack is over and conformal with an upper portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.

Fin doping and integrated circuit structures resulting therefrom

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Portland, OR, United States of America

Tzu-Min Ou