Taiwan Semiconductor Manufacturing Comp. Ltd.

Tzu Jeng Hsu

Chi-Ming Yang

Chin-Hsiang Lin

Heng-Hsin Liu

Chyi Shyuan Chern

Chih-Wei Wen

Jui-Chun Peng

Jyh-Shiou Hsu

Chien-Hsing Lu

Hsin-Fu Tseng

Chih-chiang Tu

An EUV radiation source apparatus includes an EUV source vessel including a chamber; a crucible disposed in the chamber; a tin layer disposed on the crucible; a catcher disposed in the chamber and configured to collect fuel debris generated from a collision of the tin layer and a laser beam; a heat dissipation structure disposed over the catcher; and a venting system coupled to the EUV source vessel and communicable with the chamber. A method for generating EUV radiation includes: collecting fuel debris on a catcher disposed in a chamber of an EUV source vessel; dissipating heat from the catcher to the chamber; and venting a gas out of the EUV source vessel to cool the chamber to a decreased temperature through an opening disposed on the EUV source vessel.

Extreme ultraviolet (EUV) radiation source apparatus, EUV lithography system, and method for generating extreme ultraviolet radiation

An electromagnetic radiation generation apparatus includes a collector, a gas supplier and a gas pipeline. The collector has a reflection surface configured to reflect an electromagnetic radiation. The collector includes a bottom portion, a perimeter portion, and a middle portion between the bottom portion and the perimeter portion. The middle portion of the collector includes a plurality of openings. The gas supplier is configured to provide a buffer gas. The gas pipeline is in communication with the gas supplier and the collector, and configured to purge the buffer gas through the openings of the middle portion to form a gas protection layer near the reflection surface of the collector. The openings of the middle portion include a plurality of holes arranged in an array including a plurality of rows of holes, or a plurality of concentric gaps.

Apparatus and method for generating an electromagnetic radiation

A method of manufacturing a semiconductor structure includes loading the substrate from a first load lock chamber into a first processing chamber; disposing a conductive layer over the substrate in the first processing chamber; loading the substrate from the first processing chamber into the first load lock chamber; loading the substrate from the first load lock chamber into an enclosure filled with an inert gas and disposed between the first load lock chamber and a second load lock chamber; loading the substrate from the enclosure into the second load lock chamber; loading the substrate from the second load lock chamber into a second processing chamber; disposing a conductive member over the conductive layer in the second processing chamber; loading the substrate from the second processing chamber into the second load lock chamber; and loading the substrate from the second load lock chamber into a second load port.

Method of manufacturing semiconductor structure

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Hsinchu, Taiwan

Tzu Jeng Hsu