Taiwan Semiconductor Manufacturing Comp. Ltd.

Gudeng Precision Industrial Co., Ltd.

Tzu-Jeng Hsu

Ming-Long Chiu

Shao-Wei Lu

Jain-Ping Sheng

Shun-An Chen

Chien-Feng Wang

Ying-Wei Hsu

Constance Chu

A Front Opening Unified Pod (FOUP) has a pair of latch structures, and the latch structures install in a door of the FOUP. The latch structures use a circular rotary turntable to drive a pair of sliding devices, let the latch structures can lock or unlock more stabilized, and use sliding rollers respectively disposed on the sliding devices to prevent the generation of dusts.

Front opening unified pod with latch structure

A FOUP (front opening unified pod) is disposed with a plurality of supporting pieces, the positions of which are calibrated to be symmetrical for the supporting pieces to horizontally support wafers in the pod, and with an OHT pad (overhead hoist transport pad), a major function of which is to evenly distribute the weight of the FOUP and the wafers so that the transportation of the FOUP and the wafers by the OHT head can be further stabilized and more weight can be loaded to meet the demands of the process.

Large-sized front opening unified wafer POD

A system for managing quality control in a manufacturing plant for processing lots of work in process (WIP) for at least one product, comprises a manufacturing process which includes a manufacturing executive system (MES) which provides inspection data to a statistical process control (SPC) database, and an SPC analyzer for analyzing the inspection data and providing a sampling rate rule output to a sampling rate database. A server supplies the sampling rate rule to the MES. The MES tests a condition as to whether a lot of WIP should be sampled. If the condition is met, then provide an inspect control signal for inspection to the plant for inspecting the lot. If the condition is not met, then branch away from the control signal to provide an alternative control signal to pass on to the next process step in the plant.

Statistical in-process quality control sampling based on product stability through a systematic operation system and method

A method is described for applying Optical Proximity Correction to corners and line ends in a pattern having critical dimensions in the sub micron region. Segments of curves are used to approximate corners and line ends in a pattern. The normal vector to the curve and area vector are then determined for all points on the segment of the curve used to approximate the pattern feature. The area vector has the same direction as the normal vector and a magnitude equal to the distance between the curve and the undistorted pattern. An optical proximity correction vector is then determined as the sum of a first scaler function multiplied by the unit normal vector and a second scaler function multiplied by the area vector. Next an optimum optical proximity correction shape is determined by moving the curve a distance and direction equal to the optical proximity correction vector. The optimum proximity correction shape is then approximated using regular geometric shapes, rectangles and triangles, to form an optical proximity corrected pattern. A mask of the optical proximity corrected pattern can be formed using electron beam methods without requiring excessive electron beam time.

Growing community of inventors

Taipei, Taiwan

Tzu-Jeng Hsu