Amulaire Thermal Technology, Inc.

Tzu-Hsuan Wang

Tze-Yang Yeh

Chun-Lung Wu

Chih-Hung Shih

Ching-Ming Yang

A power module package structure includes, from top to bottom, a layer of power chips, an upper bonding layer, a thermally-conductive and electrically-insulating composite layer, and a heat dissipation layer. The thermally-conductive and electrically-insulating composite layer contains an insulating layer and an upper copper layer that is formed on the insulating layer. One or more layers of upper packaging materials are covered over the layer of power chips and the upper bonding layer and are in contact with an upper surface of the upper copper layer. One or more layers of lower packaging materials are in contact with the insulating layer and are in contact with sidewalls of the upper copper layer. The lower packaging material has a higher rigidity than the upper packaging material.

Power module package structure

An IGBT module with a heat dissipation structure and a method for manufacturing the same are provided. The IGBT module with a heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. A portion of the thermally-conductive and electrically-insulating layer is made of a polymer composite material, and a remaining portion of the thermally-conductive and electrically-insulating layer is made of a ceramic material. The thick copper layer is bonded onto the thermally-conductive and electrically-insulating layer by hot pressing. A fillet is formed at a bottom edge of the thick copper layer, and the bottom edge of the thick copper layer is embedded into the thermally-conductive and electrically-insulating layer.

IGBT module with heat dissipation structure and method for manufacturing the same

An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a first polymer composite layer, a second polymer composite layer, a first ceramic layer, a second ceramic layer, and a heat dissipation layer. The first ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the first layer of chips, and the second ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the second layer of chips.

IGBT module with heat dissipation structure having ceramic layers corresponding in position and in area to chips

An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. The first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals. The first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively. The number of chips of the first layer of chips is larger than that of the second layer of chips such that the first copper layer has a greater thickness than the second copper layer.

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Taipei, Taiwan

Tzu-Hsuan Wang