United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Lextar Electronics Corporation

Tzu-Hao Liu

Yi-Wei Chen

Chih-Chien Liu

Tsun-Min Cheng

Pin-Hong Chen

Chih-Chieh Tsai

Chun-Chieh Chiu

Tzu-Chieh Chen

Kai-Jiun Chang

Yi-An Huang

Chia-Chen Wu

Ji-Min Lin

Po-Chih Wu

Po-Shen Chen

Chien-Nan Yeh

Chun-Ling Lin

Chun-Jong Chang

Ko-Wei Lin

Huei-Ru Tsai

Jhao-Cyuan Huang

Ying-Lien Chen

Sheng-Yi Su

Hung-Miao Lin

A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.

Semiconductor device and method for fabricating the same

A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with Hgas at a first pressure. The cobalt layer is treated with a Hplasma at a second pressure. The second pressure is lower than the first pressure.

Method for forming copper material over substrate

A dimming system includes a signal generating circuit, a first dimming circuit and a second dimming circuit. The signal generating circuit generates the driving signal according to the input signal, and switches the driving signal between multiple states according to the switch signal. The first dimming circuit generates the dimming signal to adjust the luminance of the LED device according to the driving signal. When the driving signal is switched from the first states to the second states, the dimming signal is changed by the first dimming circuit so that the luminance of the LED device is adjusted from the first luminance to the second luminance. The second dimming circuit adjusts the input signal according to the control signal so that the dimming signal is adjusted and the luminance of the LED device is between the first luminance and minimum luminance, or between the second luminance and minimum luminance.

LED device and dimming system and method thereof

Growing community of inventors

Taichung, Taiwan

Tzu-Hao Liu