Etron Technology, Inc.

Tzu-Hao Chen

Jen-Shou Hsu

Shi-Huei Liu

Ming-Hong Kuo

Lien-Sheng Yang

Te-Yi Yu

Yin-Ming Lan

Activate one active word line of two active word lines formed between two isolation word lines to a logic-high voltage, and float another active word line of the two active word lines. Then activate a plurality of first memory cells corresponding to the active word line having the logic-high voltage to a logic '1' voltage, and write a logic '0' voltage to a plurality of second memory cells corresponding to the floating active word line. Then write the logic &#x201c;1&#x201d; voltage to a plurality of bit lines. Then, suspend for charge sharing for a third predetermined time. Finally, read a voltage of the floating active word line to check if any leakage path exists between the floating active word line and the active word line having the logic-high voltage.

Memory device capable of operation in a burn in stress mode, method for performing burn in stress on a memory device, and method for detecting leakage current of a memory device

A method detects if a word line of a memory array is broken. The method includes writing a first datum to a memory cell when coupling a corresponding word line to a voltage source, writing a second datum different from the first datum to the memory cell when the coupling between the corresponding word line and the voltage source is decoupled, reading the stored data of the memory cell, and determining if the word line is broken according to the read data, the first datum, and the second datum.

Method for detecting erroneous word lines of a memory array and device thereof

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Kaohsiung, Taiwan

Tzu-Hao Chen