Applied Materials, Inc.

Tzu-Fang Huang

Li-Qun Xia

Lihua Li

Ellie Y Yieh

Hichem M'Saad

Wen H Zhu

Yung-Cheng Lu

David Wingto Cheung

Wai-Fan Yau

Farhad K Moghadam

Sohyun Park

Ralf B Willecke

Ju-Hyung Lee

Kuowei Liu

Peter Wai-Man Lee

Yeming Jim Ma

Yan Ye

Mihaela A Balseanu

Michael Santiago Cox

Yunsang Kim

Zhenjiang Cui

Vladimir Zubkov

Mei-Yee Shek

Gerardo Delgadino

Dian Sugiarto

Xiaoye Zhao

Rongping Wang

Jia Lee

Neungho Shin

Isabelita Roflox

Joey Chiu

Fang Tian

Jerry Sugiarto, Legal Representative

Srinivas D Nemani

Juan Carlos Rocha-Alvarez

Jeffrey C Hudgens

Visweswaren Sivaramakrishnan

Alexandros T Demos

Tsutomu Tanaka

Yi Zheng

Ping Xu

Sudhir R Gondhalekar

Mario David Silvetti

Nasreen Gazala Chopra

Kuo-Wei Liu

Maosheng Zhao

Louis Yang

Lihua Li Huang

Vinita Singh

Paul Matthews

Ralph P Antonio

Lee Guan Tay

Peter Lai

Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a transfer robot configured to position a substrate on a substrate support disposed within an interior of a processing chamber configured to process the substrate and a sensor disposed on the transfer robot, operably connected to a controller of the processing chamber, and configured with an angle of view to provide in-situ continuous closed loop feedback relating to spatial information of the interior of the processing chamber to the controller.

Methods and apparatus for processing a substrate

High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si&#x2014;N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400&#xb0; C., and exposing the deposited silicon nitride film to ultraviolet radiation.

Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure

High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Oxide-like seasoning for dielectric low k films

According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.

Multi step ebeam process for modifying dielectric materials

Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

Adhesion improvement for low k dielectrics

A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

Method of forming a low-K dual damascene interconnect structure

A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

Method of depositing low k films

A method is provided for processing a substrate including providing a processing gas comprising hydrogen gas and an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Method of improving stability in low k barrier layers

A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film having silicon, carbon, and hydrogen, and then treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of the film.

Hardness improvement of silicon carboxy films

A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber, introducing a gas mixture comprising a hydrogen-containing gas to the chemical vapor deposition chamber, forming a plasma of the gas mixture proximate the low dielectric constant film using a radio frequency power, and applying a direct current bias to at least one of the substrate or a gas distribution plate to cure the low dielectric constant film.

Method for curing low dielectric constant film using direct current bias

A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.

Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics

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San Jose, CA, United States of America

Tzu-Fang Huang