Nan Ya Technology Corporation

Tzu En Ho

Chang Rong Wu

Shing-Yih Shih

Yi-Nan Chen

Pei-Ing Paul Lee

Hsin-Jung Ho

Tung-Wang Huang

Hsien Wen Su

A manufacturing method for a shallow trench isolation region with high aspect ratio. The method comprises the steps of providing a substrate with a trench therein, forming a first insulation layer on the substrate and inside the trench by high density plasma chemical vapor deposition (HDPCVD), removing the majority of the first insulation layer outside the trench by spray type etching, and forming a second insulation layer on the first insulation layer by low pressure CVD to fill the trench. According to the present invention, a void-free shallow trench isolation with high aspect ration can be achieved.

Manufacturing method for a shallow trench isolation region with high aspect ratio

A method for forming thoroughly deposited shallow trench isolation. A first oxide layer is formed conformally over the surface of a semiconductor substrate and on a trench thereon with an aspect ratio greater than 3. A liquid etching shield is filled in the trench by spin-spraying to cover the oxide layer in the trench. An etchant is then sprayed over the surface of the semiconductor substrate to remove the uncovered oxide layer and expose the surface of the semiconductor substrate. The density of the etchant is less than that of the liquid etching shield. A second oxide layer is deposited in the trench to form isolation without voids or seams.

Method for shallow trench isolation fabrication and partial oxide layer removal

A method for forming shallow trench isolation. A substrate is provided with a mask layer formed thereon. The mask layer is etched to expose a portion of the substrate, and the portion of the substrate is etched to form a trench. A liner layer is formed on the inside wall of the trench. A first dielectric layer and a sacrificial layer are sequentially deposited on the substrate such that the trench is substantially filled, wherein the first dielectric layer is formed by high density plasma chemical vapor deposition (HDPCVD). Portions of the first dielectric layer and the sacrificial layer are removed from the trench. A second dielectric layer is deposited on the substrate such that the trench is substantially filled, wherein the second dielectric layer is formed by high density plasma chemical vapor deposition (HDPCVD). A portion of the second dielectric layer is removed from the trench.

Method for forming shallow trench isolation

Growing community of inventors

Ilan, Taiwan

Tzu En Ho