Lingsen Precision Industries, Ltd.

Advanced Semiconductor Engineering, Inc.

Tzu-Chih Lin

Chien-Ko Liao

Hung-Hsiang Cheng

Chih-Wei Wu

Chang-Ying Hung

A chip stack structure using conductive film bridge adhesive technology comprises a substrate, a first chip, at least one bridge element, a conductive film, and a second chip. The first chip is electrically connected to a first electrode of the substrate. The at least one bridge element has a first bridge surface and a second bridge surface at two ends, and the first bridge surface and the second bridge surface are electrically connected to the first chip and a second electrode of the substrate, respectively. The conductive film is electrically connected to the first bridge surface of the at least one bridge element. The second chip is stacked and electrically connected to the conductive film. Thus, the structure of the present invention not only facilitates the ease of stacking the chips but also increases the effectiveness of the chips heat dissipation and ability of withstanding electrical current.

Chip stack structure using conductive film bridge adhesive technology

A gas sensor having a micro-package structure includes a light-emitting unit, a light-receiving unit, and a signal-processing unit all deposited on a substrate, and a package body fixed to the substrate and having a chamber and a through hole. The chamber accommodates all the units and the through hole is over the substrate. Gas enters the chamber through the through hole. The light-emitting unit emits an optical signal that passes through the gas and then is received by the light-receiving unit. Then a signal-processing unit electrically connected to the light-receiving unit performs spectral analysis. Thereby, the gas sensor is advantageous for requiring low packaging costs and being compact.

Gas sensor having micro-package structure and method for making the same

The present invention relates to a semiconductor device having a shielding layer. The semiconductor device includes a substrate, an inner metal layer, a shielding layer, an insulation material, a metal layer, a passivation layer and a redistribution layer. The inner metal layer is disposed in a through hole of the substrate. The shielding layer surrounds the inner annular metal. The insulation material is disposed between the inner metal layer and the shielding layer. The metal layer is disposed on a surface of the substrate, contacts the shielding layer and does not contact the inner metal layer. The redistribution layer is disposed in an opening of the passivation layer so as to contact the inner metal layer.

Growing community of inventors

Taichung, Taiwan

Tzu-Chih Lin