Epistar Corporation

Ireach Corporation

Tzu-Chieh Hsu

Yi-Ming Chen

Chih-Chiang Lu

Chien-Fu Huang

Chun-Yu Lin

Shih-I Chen

Chia-Liang Hsu

Ching-Pei Lin

Min-Hsun Hsieh

Chao-Hsing Chen

Yi-Wen Huang

Yao-Ning Chan

Chiu-Lin Yao

Hsin-Mao Liu

Hsin-Chih Chiu

Ching-Huai Ni

Ye-Ming Hsu

Hao-Min Ku

Han-Min Wu

Chen Ou

Hsin-Ying Wang

Chien-Kai Chung

Shou-Lung Chen

Yu-Ren Peng

Tsung-Hsien Yang

Ching-San Tao

Hsin-Kang Chen

Chi-Hsing Chen

Hui-Fang Kao

Kun-De Lin

Hsiang-Ling Chang

Yi-Hung Lin

Yi-Chieh Lin

Shih-Chang Lee

Wen-Luh Liao

Rong-Ren Lee

Chun-Yi Wu

Hsin-Chan Chung

Yi-Tang Lai

Fu-Chun Tsai

Chung-Hsun Chien

Wei-Yu Chen

Jia-Kuen Wang

Wen-Hung Chuang

Tzu-Yao Tseng

Chao Hsing Chen

Bo-Jiun Hu

Tsung-Xian Lee

Tsung-Hsun Chiang

Cheng-Nan Han

Jhih-Sian Wang

Min-Yen Tsai

Hsing-Chao Chen

Kuan-Yi Lee

Zong-Xi Chen

Shao-Ping Lu

Jhih-Jheng Yang

Chih-Wei Wei

Jen-Li Hu

Chun-Fu Tsai

Ching-Sheng Chen

Tien-Yang Wang

Chien-Kai Chun

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Semiconductor light emitting device and method of fabricating the same

A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Semiconductor device

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

Light-emitting device

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Method of selectively transferring semiconductor device

A semiconductor device includes a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first electrode on the first surface and electrically connected to the first reflective structure. The semiconductor device further includes a second electrode on the first surface and electrically connected to the second reflective structure. The semiconductor device further includes a first conductive layer on the second surface of the cavity region and including a hole formed therethrough.

A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 &#x3bc;m, and the thickness of the lower semiconductor stack is small than or equal to 1 &#x3bc;m.

Light-emitting diode

Growing community of inventors

Hsinchu, Taiwan

Tzu-Chieh Hsu