Lextar Electronics Corporation

Huga Optotech Inc.

United Epitaxy Company, Inc.

Epistar Corporation

Tzong-Liang Tsai

Yu-Chun Lee

Chih-Sung Chang

Hung-Chun Tong

Ru-Shi Liu

Ching-Yi Chen

Hung-Chia Wang

Yi-Ting Tsai

Chih-Hao Lin

Fu-Hsin Chen

Way-Jze Wen

Tzer-Perng Chen

Chiung-Chi Tsai

Wen-Wan Tai

Chung-Ying Chang

Chia-Chun Hsieh

Chih-Ching Cheng

Su-Hui Lin

Hsin-Lun Su

Lin-Chieh Kao

Tsung-Yu Yang

Shiou-Yi Kuo

Jian-Chin Liang

Chang-Han Chiang

Chih-Li Chiang

Yu-Chu Li

Jo-Hsiang Chen

Wei-Kai Wang

An-Cih Tang

Chang-Zhi Zhong

Shu-Hsiu Chang

Che-Hsuan Huang

Xue-Jie Zhang

Shin-Ying Lin

Yi-Cun Lu

Wen-Li Zhou

Cheng-Ta Kuo

Yu-Min Lin

Chien-Nan Yeh

Chi Hsiu Lee

Li-Cheng Yang

Charng-Shyang Jong

Hsiu-Mei Chou

Shu-Ying Yang

Hui-Ru Wu

Chun Che Lin

Chun-Che Lin

Kuang-Neng Yang

Kun-Hua Wu

Mu-Huai Fang

Ling-Ling Wei

Fang-Chang Hsueh

Chaochin Su

Chi-Shen Lee

Ting-Kai Huang

Ren Hong Wang

Chun-Han Lu

Hsin-Chuan Wang

Chin-Hung Luo

Huan Jiao

Ren-Hong Wang

Hoang Duy Nguyen

Ye Jin

Kiet Tuong Ly

Tai-Hua Ho

Zhen Bao

Yu-Jui Tseng

Ming-Huang Hong

Wei-Lun Wu

A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Method of manufacturing display device

The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.

Light emitting diode structure

A pixel package is provided. The pixel package includes a flexible redistribution layer and a plurality of LED chips arranged on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package also includes a plurality of light-adjusting layers respectively disposed on the LED chips. The pixel package further includes a plurality of flexible composite laminates disposed on the surface of the flexible redistribution layer and between the LED chips.

Pixel package, method for forming the same, and display device using the same

The wavelength conversion material includes a general formula (I) MABCDE:ESREand satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.

Wavelength conversion material, method of manufacturing thereof and light emitting device

In the present disclosure embodiments, a phosphate phosphor including an activation center of trivalent chromium and a light emitting device are provided. The light emitting device includes a light source and the above mentioned phosphate phosphor, such that the phosphate phosphor is excited by the light source and emits a wide spectrum of the infrared light. The light emitting device with wide emission spectrum of the infrared light may be widely applied in detecting devices.

Phosphate phosphor, light emitting device, and detecting device

A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of T&#xdc;V Rheinland and more than 90% of wide color gamut.

Light-emitting diode device

Display device and manufacturing method thereof

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q) does not connect with any siloxy group, and the silicon atom of the first configuration (Q) connects with one siloxy group, and the silicon atom of the second configuration (Q) connects with two siloxy groups, and the silicon atom of the third configuration (Q) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

Wavelength converting material, and light emitting device

A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

Light-emitting package structure

A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.

Low blue light backlight module

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q(0Al), first configuration Q(1Al), second configuration Q(2Al), third configuration Q(3Al), and fourth configuration Q(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

Wavelength converting material and light emitting device

A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr, Ba)LiAlNO:Eu, Euwith 0&#x3c;x&#x3c;1 and y/z&#x3e;0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.

Nitride phosphor and light emitting device and backlight module employing the nitride phosphor

A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClBrI), wherein 0&#x2264;a&#x2264;1, 0&#x2264;b&#x2264;1.

Application of quantum dot composite material

An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.

Infrared emitting fluoride phosphor and infrared light emitting device

A perovskite luminescent nanocrystal has a chemical formula represented by: CsBX, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the CsBXperovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the CsBXperovskite luminescent nanocrystal is greater than 1 and less than 4.

Perovskite luminescent nanocrystal, light emitting device, and manufacturing method for perovskite luminescent nanocrystal

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Taichung, Taiwan

Tzong-Liang Tsai