Taiwan Semiconductor Manufacturing Comp. Ltd.

Tzi-Yi Shieh

Ren-Dou Lee

Chien-Wei Chang

Sheng-Tai Peng

Cheng-Ping Chen

Shih-Yen Chen

Tsung-Lung Lai

Yuh-Sen Chang

Chung-Li Lee

Jing-Cheng Lin

Wen-Chun Huang

Hsi-Kuei Cheng

Kuo-Chio Liu

Chih-Hsien Lin

Hsiang-Tai Lu

Chien-Chen Li

Feng-Inn Wu

Yu-Chen Wei

Ruey-Yun Shiue

In a method of manufacturing a semiconductor device, a sacrificial gate structure is formed over a substrate. The sacrificial gate structure includes a sacrificial gate electrode. A first dielectric layer is formed over the sacrificial gate structure. A second dielectric layer is formed over the first dielectric layer. The second and first dielectric layers are planarized and recessed, and an upper portion of the sacrificial gate structure is exposed while a lower portion of the sacrificial gate structure is embedded in the first dielectric layer. A third dielectric layer is formed over the exposed sacrificial gate structure and over the first dielectric layer. A fourth dielectric layer is formed over the third dielectric layer. The fourth and third dielectric layers are planarized, and the sacrificial gate electrode is exposed and part of the third dielectric layer remains on the recessed first dielectric layer. The sacrificial gate electrode is removed.

Method of manufacturing a semiconductor device and a semiconductor device

In some embodiments, the present disclosure relates to a chemical mechanical planarization (CMP) tool. The CMP tool includes a carrier and a malleable membrane coupled to the carrier and having a lower surface facing away from the carrier. The lower surface of the malleable membrane includes a first malleable material within a central region of the lower surface and a second malleable material within a peripheral region of the lower surface, which surrounds the central region. The first malleable material provides the central region of the lower surface with a first stiffness and the second malleable material provides the peripheral region of the lower surface with a second stiffness that is different than the first stiffness.

Chemical mechanical planarization membrane

In some embodiments, the present disclosure, in some embodiments, relates to a method of forming a CMP membrane. The method is performed by providing a malleable material within a cavity within a membrane mold. The cavity has a central region and a peripheral region surrounding the central region. The malleable material within the cavity is cured to form a membrane. Curing the malleable material is performed by heating the malleable material within the central region of the membrane mold to a first temperature and heating the malleable material within the peripheral region of the membrane mold to a second temperature that is greater than the first temperature.

A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit.

Tool and method of reflow

Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a method including mounting a die to a top surface of a substrate to form a device, encapsulating the die and top surface of the substrate in a mold compound, the mold compound having a first thickness over the die, and removing a portion, but not all, of the thickness of the mold compound over the die. The method further includes performing further processing on the device, and removing the remaining thickness of the mold compound over the die.

Two step molding grinding for packaging applications

Growing community of inventors

Hsinchu, Taiwan

Tzi-Yi Shieh